950V, 8.7mohm-cm2 high speed 4H-SiC power DMOSFETs

被引：0

作者：

Ryu, Sei-Hyung ^{[1
]}

Jonas, Charlotte ^{[2
]}

Heath, Bradley ^{[2
]}

Richmond, James ^{[2
]}

Agarwal, Anant ^{[2
]}

Palmour, John ^{[2
]}

机构：

[1] Cree Inc, Sic Power Devices, 4600 Silicon Dr, Durham, NC 27706 USA

[2] Cree Inc, Durham, NC 27706 USA

来源：

SILICON CARBIDE 2006 - MATERIALS, PROCESSING AND DEVICES | 2006年 / 911卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Fabrication and characteristics of high voltage, high speed DMOSFETs in 4H-SiC are presented. The devices were built on 1.2x10(16) cm(-3) doped, 6 mu m thick n-type epilayer grown on a n(+) 4H-SiC substrate. A specific on-resistance of 8.7 m Omega cm(2) and a blocking voltage of 950 V were measured. Device characteristics were measured for temperatures up to 300 degrees C. An increase of specific on-resistance by 35% observed at 300 degrees C, when compared to the value at room temperature. This is due to a negative shift in MOS threshold voltage, which decreases the MOS channel resistance at elevated temperatures. This effect cancels out the increase in drift layer resistance due to a decrease in bulk electron mobility at elevated temperature, resulting in a temperature stable on-resistance. The device operation at temperatures up to 300 degrees C and high speed switching results are also reported in this paper.

引用

页码：391 / +

页数：3

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