950V, 8.7mohm-cm2 high speed 4H-SiC power DMOSFETs

被引：0
|
作者：
Ryu, Sei-Hyung [1 ]
Jonas, Charlotte [2 ]
Heath, Bradley [2 ]
Richmond, James [2 ]
Agarwal, Anant [2 ]
Palmour, John [2 ]
机构：
[1] Cree Inc, Sic Power Devices, 4600 Silicon Dr, Durham, NC 27706 USA
[2] Cree Inc, Durham, NC 27706 USA
来源：
SILICON CARBIDE 2006 - MATERIALS, PROCESSING AND DEVICES | 2006年 / 911卷
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Fabrication and characteristics of high voltage, high speed DMOSFETs in 4H-SiC are presented. The devices were built on 1.2x10(16) cm(-3) doped, 6 mu m thick n-type epilayer grown on a n(+) 4H-SiC substrate. A specific on-resistance of 8.7 m Omega cm(2) and a blocking voltage of 950 V were measured. Device characteristics were measured for temperatures up to 300 degrees C. An increase of specific on-resistance by 35% observed at 300 degrees C, when compared to the value at room temperature. This is due to a negative shift in MOS threshold voltage, which decreases the MOS channel resistance at elevated temperatures. This effect cancels out the increase in drift layer resistance due to a decrease in bulk electron mobility at elevated temperature, resulting in a temperature stable on-resistance. The device operation at temperatures up to 300 degrees C and high speed switching results are also reported in this paper.
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页码：391 / +
页数：3
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