Energy band structures of strained membrane quantum wires considering the redistribution of elastic strain relaxation

被引:0
|
作者
Ferdous, Fahmida [1 ]
Haque, A. [2 ]
机构
[1] Bangladesh Univ Engn & Technol, Dept Elect & Elect Engn, Dhaka 1000, Bangladesh
[2] East West Univ, Dept Elect & Elect Engn, Chicago, IL USA
关键词
D O I
10.1109/NUSOD.2006.306724
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Energy band structure of GaInAsP/InP compressively strained membrane quantum wires is theoretically studied using 8 band k.p method. Redistribution of elastic strain relaxation due to etching away of lower and upper InP clad layers in membrane quantum wires is considered in the calculation. It is found that strain redistribution increases the effective bandgap of membrane quantum wire structures causing a blue shift of the emission frequency. Comparison with effective bandgap calculation using a bulk-like approach neglecting confinement and bandmixing demonstrates that neglect of these effects leads to an over-estimation of the change in the bandgap.
引用
收藏
页码:27 / +
页数:2
相关论文
共 50 条
  • [41] Strain Effects on the Optical Properties of Compressively-strained InGaAs/InP Multiple Quantum Wires
    Park, Seoung-Hwan
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2014, 64 (08) : 1196 - 1201
  • [42] Strain effects on the optical properties of compressively-strained InGaAs/InP multiple quantum wires
    Seoung-Hwan Park
    Journal of the Korean Physical Society, 2014, 64 : 1196 - 1201
  • [43] Energy relaxation in In0.53Ga0.47As/InP quantum wires
    Kieseling, F
    Braun, W
    Ils, P
    Wang, KH
    Forchel, A
    HOT CARRIERS IN SEMICONDUCTORS, 1996, : 309 - 313
  • [44] EVIDENCE FOR STRAIN RELAXATION VIA COMPOSITION FLUCTUATIONS IN STRAINED QUATERNARY QUATERNARY AND QUATERNARY TERNARY MULTIPLE-QUANTUM-WELL STRUCTURES
    BANGERT, U
    HARVEY, AJ
    WILKINSON, VA
    DIEKER, C
    JOWETT, JM
    SMITH, AD
    PERRIN, SD
    GIBBINS, CJ
    JOURNAL OF CRYSTAL GROWTH, 1993, 132 (1-2) : 231 - 240
  • [45] ENERGY MINIGAPS IN THE QUANTUM WIRES WITH LATERAL SURFACE-STRUCTURES
    DENG, ZY
    SUN, H
    GU, SW
    COMMUNICATIONS IN THEORETICAL PHYSICS, 1993, 19 (04) : 409 - 414
  • [46] CALCULATION OF STRAIN RELAXATION IN STRAINED-LAYER STRUCTURES - COMPARISON OF ATOMISTIC AND CONTINUUM METHODS
    FAUX, DA
    JONES, G
    OREILLY, EP
    MODELLING AND SIMULATION IN MATERIALS SCIENCE AND ENGINEERING, 1994, 2 (01) : 9 - 20
  • [47] Edge strain relaxation in quantum wells grown on the cleaved edge of a strained semiconductor superlattice
    Priester, C
    Sferco, SJ
    PHYSICAL REVIEW B, 1997, 55 (11) : 6693 - 6696
  • [48] Elastic strain relaxation in free-standing SiGe/Si structures
    Mooney, PM
    Cohen, GM
    Chu, JO
    Murray, CE
    APPLIED PHYSICS LETTERS, 2004, 84 (07) : 1093 - 1095
  • [49] DEPENDENCE OF BAND OFFSETS ON ELASTIC STRAIN IN GAAS/GAAS1-XPX STRAINED-LAYER SINGLE QUANTUM-WELLS
    ZHANG, X
    ONABE, K
    NITTA, Y
    ZHANG, BP
    FUKATSU, S
    SHIRAKI, Y
    ITO, R
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (9B): : L1631 - L1634
  • [50] THE FOURIER-SERIES METHOD FOR THE CALCULATION OF STRAIN RELAXATION IN STRAINED-LAYER STRUCTURES
    FAUX, DA
    JOURNAL OF APPLIED PHYSICS, 1994, 75 (01) : 186 - 192