Energy band structures of strained membrane quantum wires considering the redistribution of elastic strain relaxation

被引:0
|
作者
Ferdous, Fahmida [1 ]
Haque, A. [2 ]
机构
[1] Bangladesh Univ Engn & Technol, Dept Elect & Elect Engn, Dhaka 1000, Bangladesh
[2] East West Univ, Dept Elect & Elect Engn, Chicago, IL USA
关键词
D O I
10.1109/NUSOD.2006.306724
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Energy band structure of GaInAsP/InP compressively strained membrane quantum wires is theoretically studied using 8 band k.p method. Redistribution of elastic strain relaxation due to etching away of lower and upper InP clad layers in membrane quantum wires is considered in the calculation. It is found that strain redistribution increases the effective bandgap of membrane quantum wire structures causing a blue shift of the emission frequency. Comparison with effective bandgap calculation using a bulk-like approach neglecting confinement and bandmixing demonstrates that neglect of these effects leads to an over-estimation of the change in the bandgap.
引用
收藏
页码:27 / +
页数:2
相关论文
共 50 条
  • [31] Enhanced confinement energy in strained asymmetric T-shaped quantum wires
    Jensen, JR
    Hvam, JM
    Langbein, W
    JOURNAL OF CRYSTAL GROWTH, 2001, 227 : 966 - 969
  • [32] Elastic relaxation of truncated pyramidal quantum dots and quantum wires in a half space: An analytical calculation
    Glas, F
    JOURNAL OF APPLIED PHYSICS, 2001, 90 (07) : 3232 - 3241
  • [33] Elastic relaxation of isolated and interacting truncated pyramidal quantum dots and quantum wires in a half space
    Glas, F
    APPLIED SURFACE SCIENCE, 2002, 188 (1-2) : 9 - 18
  • [34] Use of an optical microcavity to probe exciton relaxation in strained V-groove quantum wires
    Constantin, C
    Oberli, DY
    Martinet, E
    Rudra, A
    Kapon, E
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2000, 178 (01): : 161 - 165
  • [35] STRAIN RELAXATION PHENOMENA IN GEXSI1-X/SI STRAINED STRUCTURES
    HULL, R
    BEAN, JC
    EAGLESHAM, DJ
    BONAR, JM
    BUESCHER, C
    THIN SOLID FILMS, 1989, 183 : 117 - 132
  • [36] Electronic band structures of GaInNAs/GaAs compressive strained quantum wells
    Fan, WJ
    Yoon, SF
    JOURNAL OF APPLIED PHYSICS, 2001, 90 (02) : 843 - 847
  • [37] Dependence of band offsets on elastic strain in GaAs/GaAs1-xPx strained-layer single quantum wells
    Zhang, Xiong
    Onabe, Kentaro
    Nitta, Yoshiki
    Zhang, Baoping
    Fukatsu, Susumu
    Shiraki, Yasuhiro
    Ito, Ryoichi
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1991, 30 (9 B): : 1631 - 1634
  • [38] Strain relaxation induced red shift of photoluminescence of CdZnSe/ZnSe quantum wires
    Straub, H
    Brunthaler, G
    Faschinger, W
    Bauer, G
    Vieu, C
    ACTA PHYSICA POLONICA A, 1996, 90 (05) : 1085 - 1089
  • [39] Electronic structure and energy relaxation in strained InAs/GaAs quantum pyramids
    Grundmann, M
    Heitz, R
    Ledentsov, N
    Stier, O
    Bimberg, D
    Ustinov, VM
    Kopev, PS
    Alferov, ZI
    Ruvimov, SS
    Werner, P
    Gosele, U
    Heydenreich, J
    SUPERLATTICES AND MICROSTRUCTURES, 1996, 19 (02) : 81 - 95
  • [40] Electronic structure and energy relaxation in strained InAs/GaAs quantum pyramids
    Inst. für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, D-10623 Berlin, Germany
    不详
    不详
    不详
    不详
    Superlattices Microstruct, 2 (x-95):