DEPENDENCE OF BAND OFFSETS ON ELASTIC STRAIN IN GAAS/GAAS1-XPX STRAINED-LAYER SINGLE QUANTUM-WELLS

被引：22

作者：

ZHANG, X ^{[1
]}

ONABE, K ^{[1
]}

NITTA, Y ^{[1
]}

ZHANG, BP ^{[1
]}

FUKATSU, S ^{[1
]}

SHIRAKI, Y ^{[1
]}

ITO, R ^{[1
]}

机构：

[1] UNIV TOKYO, DEPT APPL PHYS, BUNKYO KU, TOKYO 113, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1991年 / 30卷 / 9B期

关键词：

MOVPE; STRAINED-LAYER SINGLE QUANTUM WELL; BAND OFFSET; REFLECTANCE; PHOTOLUMINESCENCE;

D O I：

10.1143/JJAP.30.L1631

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-quality GaAs/GaAs1-xPx (x = 0.15, 0.20, 0.22) strained-layer single quantum well structures have been grown on GaAs1-yPy (y = 0.1, 0.2) substrates by metal organic vapor phase epitaxy (MOVPE) and characterized by the combination of the reflectance and photoluminescence measurements. Relying on the strong and highly resolved optical transitions between the energy subbands of electrons and holes (including heavy and light holes) in the spectra, we have accurately determined the conduction and valence band offsets in this strained system. The results obtained clarify for the first time that the band offsets are strongly dependent on elastic strain or composition.

引用

页码：L1631 / L1634

页数：4

共 50 条

[1] Dependence of band offsets on elastic strain in GaAs/GaAs1-xPx strained-layer single quantum wells
Zhang, Xiong
Onabe, Kentaro
Nitta, Yoshiki
Zhang, Baoping
Fukatsu, Susumu
Shiraki, Yasuhiro
Ito, Ryoichi
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1991, 30 (9 B): : 1631 - 1634
[2] OPTICAL CHARACTERIZATION OF BAND-EDGE LINEUPS IN GAAS/GAAS1-XPX STRAINED-LAYER QUANTUM-WELLS
XIONG, Z
ONABE, K
NITTA, Y
ZHANG, BP
FUKATSU, S
SHIRAKI, Y
ITO, R
SURFACE SCIENCE, 1992, 267 (1-3) : 110 - 113
[3] Valence band offsets in strained GaAs1-xPx/GaAs heterojunctions
Univ of Massachusetts, Amherst, United States
J Electron Mater, 6 (713-717):
[4] VALENCE-BAND OFFSETS IN STRAINED GAAS1-XPX/GAAS HETEROJUNCTIONS
ANDERSON, NG
AGAHI, F
BALIGA, A
LAU, KM
JOURNAL OF ELECTRONIC MATERIALS, 1995, 24 (06) : 713 - 717
[5] HIGH-PRESSURE PHOTOLUMINESCENCE STUDY OF GAAS/GAAS1-XPX STRAINED MULTIPLE QUANTUM-WELLS
SHAN, W
HWANG, SJ
SONG, JJ
HOU, HQ
TU, CW
PHYSICAL REVIEW B, 1993, 47 (07): : 3765 - 3770
[6] CHARACTERIZATION OF INGAAS/GAAS STRAINED-LAYER QUANTUM-WELLS GROWN ON (311)A GAAS SUBSTRATES
TAKAHASHI, M
VACCARO, P
FUJITA, K
WATANABE, T
APPLIED PHYSICS LETTERS, 1995, 66 (01) : 93 - 95
[7] THE DETERMINATION OF THE BAND OFFSETS IN STRAINED-LAYER INXGA1-XAS/GAAS QUANTUM-WELLS BY LOW-TEMPERATURE MODULATION SPECTROSCOPY
CHI, WS
HUANG, YS
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1995, 10 (02) : 127 - 137
[8] OPTICAL NONLINEARITIES IN STRAINED-LAYER INGAAS/GAAS MULTIPLE QUANTUM-WELLS
JIN, R
OKADA, K
KHITROVA, G
GIBBS, HM
PEREIRA, M
KOCH, SW
PEYGHAMBARIAN, N
APPLIED PHYSICS LETTERS, 1992, 61 (15) : 1745 - 1747
[9] LASING TRANSITIONS IN GAAS/GAAS1-XPX STRAINED-LAYER SUPERLATTICES WITH X=0.1-0.5
GOURLEY, PL
HOHIMER, JP
BIEFELD, RM
APPLIED PHYSICS LETTERS, 1985, 47 (06) : 552 - 554
[10] ANOMALIES IN PHOTOLUMINESCENCE LINEWIDTH OF INGAAS/GAAS STRAINED-LAYER QUANTUM-WELLS
MURAKI, K
FUKATSU, S
SHIRAKI, Y
ITO, R
SURFACE SCIENCE, 1992, 267 (1-3) : 107 - 109

← 1 2 3 4 5 →