DEPENDENCE OF BAND OFFSETS ON ELASTIC STRAIN IN GAAS/GAAS1-XPX STRAINED-LAYER SINGLE QUANTUM-WELLS

被引：22
|
作者：
ZHANG, X [1 ]
ONABE, K [1 ]
NITTA, Y [1 ]
ZHANG, BP [1 ]
FUKATSU, S [1 ]
SHIRAKI, Y [1 ]
ITO, R [1 ]
机构：
[1] UNIV TOKYO, DEPT APPL PHYS, BUNKYO KU, TOKYO 113, JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1991年 / 30卷 / 9B期
关键词：
MOVPE; STRAINED-LAYER SINGLE QUANTUM WELL; BAND OFFSET; REFLECTANCE; PHOTOLUMINESCENCE;
D O I：
10.1143/JJAP.30.L1631
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
High-quality GaAs/GaAs1-xPx (x = 0.15, 0.20, 0.22) strained-layer single quantum well structures have been grown on GaAs1-yPy (y = 0.1, 0.2) substrates by metal organic vapor phase epitaxy (MOVPE) and characterized by the combination of the reflectance and photoluminescence measurements. Relying on the strong and highly resolved optical transitions between the energy subbands of electrons and holes (including heavy and light holes) in the spectra, we have accurately determined the conduction and valence band offsets in this strained system. The results obtained clarify for the first time that the band offsets are strongly dependent on elastic strain or composition.
引用
收藏
页码：L1631 / L1634
页数：4
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