Ultrahigh vacuum deposition of higher manganese silicide Mn4Si7 thin films

被引：5
|
作者：
Dulal, Rajendra P. [1 ]
Dahal, Bishnu R.
Pegg, Ian L.
Philip, John
机构：
[1] Catholic Univ Amer, Dept Phys, Washington, DC 20064 USA
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2015年 / 33卷 / 06期
基金：
美国国家科学基金会;
关键词：
SEMICONDUCTING PROPERTIES; THERMOELECTRIC PROPERTIES; CRYSTAL-STRUCTURE;
D O I：
10.1116/1.4933083
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The authors have successfully grown one of the higher manganese silicides, Mn4Si7 thin films on silicon (100) substrates using an ultrahigh vacuum deposition with a base pressure of 1 x 10(-9) Torr. The thickness of the film was varied from 65 to 100 nm. These films exhibit a tetragonal crystal structure and display paramagnetic behavior as predicted for the stoichiometric Mn4Si7 system. They have a resistivity of 3.32 x 10(-5) Omega m at room temperature and show a semimetallic nature. (C) 2015 American Vacuum Society.
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页数：3
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