Ultrahigh vacuum deposition of higher manganese silicide Mn4Si7 thin films

被引：5

作者：

Dulal, Rajendra P. ^{[1
]}

Dahal, Bishnu R.

Pegg, Ian L.

Philip, John

机构：

[1] Catholic Univ Amer, Dept Phys, Washington, DC 20064 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2015年 / 33卷 / 06期

基金：

美国国家科学基金会;

关键词：

SEMICONDUCTING PROPERTIES; THERMOELECTRIC PROPERTIES; CRYSTAL-STRUCTURE;

D O I：

10.1116/1.4933083

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors have successfully grown one of the higher manganese silicides, Mn4Si7 thin films on silicon (100) substrates using an ultrahigh vacuum deposition with a base pressure of 1 x 10(-9) Torr. The thickness of the film was varied from 65 to 100 nm. These films exhibit a tetragonal crystal structure and display paramagnetic behavior as predicted for the stoichiometric Mn4Si7 system. They have a resistivity of 3.32 x 10(-5) Omega m at room temperature and show a semimetallic nature. (C) 2015 American Vacuum Society.

引用

页数：3

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