Correlation between defects and electrical conduction in surface conductive layer of CVD-diamond films

被引：0
|
作者：
Show, Y
Matsuoka, F
Ri, S
Akiba, Y
Kurosu, T
Iida, M
Izumi, T
机构：
来源：
DEFECTS IN ELECTRONIC MATERIALS II | 1997年 / 442卷
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Correlation between defects and electrical conduction in surface conductive layers of CVD diamond films has been studied using electron spin resonance (ESR) and two points probe technique methods, The ESR analysis revealed the presence of P-ac-center with spin density of 10(20) spins/cm(3). The P-ac-center is composed from two ESR signals : ESR signal from carbon dangling bond with carbon atom neighbors and ESR signal from carbon dangling bond associated with nearest neighbor hole ( hole associated P-ac-center). The hole associated P-ac-center is an electrically active defect.
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页码：681 / 686
页数：6
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