Determination of conduction and valence band electronic structure of La2Ti2O7 thin film

被引：10
|
作者：
Szlachetko, Jakub [1 ,2 ]
Pichler, Markus [1 ]
Pergolesi, Daniele [1 ]
Sa, Jacinto [1 ]
Lippert, Thomas [1 ]
机构：
[1] Paul Scherrer Inst, CH-5232 Villigen, Switzerland
[2] Jan Kochanowski Univ, Inst Phys, PL-25406 Kielce, Poland
来源：
RSC ADVANCES | 2014年 / 4卷 / 22期
关键词：
D O I：
10.1039/c3ra47357k
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
The electronic structure of a La2Ti2O7-layered perovskite thin film was determined by resonant inelastic X-ray scattering (RIXS) measurements and FEFF calculations. It was found that the empty Ti and La d-band states dominate the conduction band of the structure, whereas the top edge of the valence band is mainly composed of filled O-p states. Furthermore, there is a pronounced overlap between occupied La-p states and O-s states, which are located deeper in the valence band.
引用
收藏
页码：11420 / 11422
页数：3
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