Determination of conduction and valence band electronic structure of La2Ti2O7 thin film

被引：10

作者：

Szlachetko, Jakub ^{[1
,2
]}

Pichler, Markus ^{[1
]}

Pergolesi, Daniele ^{[1
]}

Sa, Jacinto ^{[1
]}

Lippert, Thomas ^{[1
]}

机构：

[1] Paul Scherrer Inst, CH-5232 Villigen, Switzerland

[2] Jan Kochanowski Univ, Inst Phys, PL-25406 Kielce, Poland

来源：

RSC ADVANCES | 2014年 / 4卷 / 22期

关键词：

D O I：

10.1039/c3ra47357k

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The electronic structure of a La2Ti2O7-layered perovskite thin film was determined by resonant inelastic X-ray scattering (RIXS) measurements and FEFF calculations. It was found that the empty Ti and La d-band states dominate the conduction band of the structure, whereas the top edge of the valence band is mainly composed of filled O-p states. Furthermore, there is a pronounced overlap between occupied La-p states and O-s states, which are located deeper in the valence band.

引用

页码：11420 / 11422

页数：3

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