A 20mΩcm2 600 V-class superjunction MOSFET

被引：0
|
作者：
Saito, W [1 ]
Omura, I [1 ]
Aida, S [1 ]
Koduki, S [1 ]
Izumisawa, M [1 ]
Yoshioka, H [1 ]
Ogura, T [1 ]
机构：
[1] Toshiba Co Ltd, Semicond Co, Saiwai Ku, Kawasaki, Kanagawa 2128583, Japan
来源：
ISPSD '04: PROCEEDINGS OF THE 16TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS | 2004年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Superjunction (SJ) MOSFETs with extremely low on-resistance and high avalanche withstanding capability have been designed and experimentally demonstrated. The p- and n-columns for the SJ structure are designed to reduce the on-resistance and to maximize both the breakdown voltage and the avalanche withstanding capability. The demonstrated SJ-MOSFET realized the lowest on-resistance of 20similar tomOmegacm(2) among previously reported 600 V-class SJ-MOSFETs. The device also withstands high avalanche current of 185similar toA/cm(2).
引用
收藏
页码：459 / 462
页数：4
相关论文
共 50 条
  • [41] A 55-V, 0.2-M-OMEGA.CM(2) VERTICAL TRENCH POWER MOSFET
    SHENAI, K
    IEEE ELECTRON DEVICE LETTERS, 1991, 12 (03) : 108 - 110
  • [42] 600V 1.3mΩ•cm2 Low-Leakage Low-Current-Collapse AlGaN/GaN HEMTs with AlN/SiNx Passivation
    Tang, Zhikai
    Huang, Sen
    Jiang, Qimeng
    Liu, Shenghou
    Liu, Cheng
    Chen, Kevin J.
    2013 25TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), 2013, : 191 - 194
  • [43] High channel density, 20 A 4H-SiC ACCUFET with Ronsp=15 mΩ-cm2
    Singh, R
    Capell, DC
    Richmond, JT
    Palmour, JW
    ELECTRONICS LETTERS, 2003, 39 (01) : 152 - 154
  • [44] Enhancement-mode GaN hybrid MOS-HEMTs with Ron,sp of 20 mΩ-cm2
    Huang, W.
    Li, Z.
    Chow, T. P.
    Niiyama, Y.
    Nomura, T.
    Yoshida, S.
    ISPSD 08: PROCEEDINGS OF THE 20TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, 2008, : 295 - +
  • [45] A 5 × 5 cm2 protonic ceramic fuel cell with a power density of 1.3 W cm–2 at 600 °C
    Hyegsoon An
    Hae-Weon Lee
    Byung-Kook Kim
    Ji-Won Son
    Kyung Joong Yoon
    Hyoungchul Kim
    Dongwook Shin
    Ho-Il Ji
    Jong-Ho Lee
    Nature Energy, 2018, 3 : 870 - 875
  • [46] Large area 1200 V SiC BJTs with β>100 and ρON<3 mΩcm2
    Domeij, Martin
    Konstantinov, Andrei
    Lindgren, Anders
    Zaring, Carina
    Gumaelius, Krister
    Reimark, Mats
    SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 2012, 717-720 : 1123 - 1126
  • [47] Low on-resistance 1.2 kV 4H-SiC power MOSFET with Ron, sp of 3.4 mΩ.cm2
    Liu, Qiang
    Wang, Qian
    Liu, Hao
    Fei, Chenxi
    Li, Shiyan
    Huang, Runhua
    Bai, Song
    JOURNAL OF SEMICONDUCTORS, 2020, 41 (06)
  • [48] Lateral source field-plated β-Ga2O3 MOSFET with recorded breakdown voltage of 2360 V and low specific on-resistance of 560 mΩ cm2
    Lv, Yuanjie
    Zhou, Xingye
    Long, Shibing
    Liang, Shixiong
    Song, Xubo
    Zhou, Xuanze
    Dong, Hang
    Wang, Yuangang
    Feng, Zhihong
    Cai, Shujun
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2019, 34 (11)
  • [49] 702.3 A.cm-2/10.4 mΩ.cm2 Vertical β-Ga2O3 U-Shape Trench Gate MOSFET With N-Ion Implantation
    Ma, Yongjian
    Zhou, Xuanze
    Tang, Wenbo
    Zhang, Xiaodong
    Xu, Guangwei
    Zhang, Li
    Chen, Tiwei
    Dai, Shige
    Bian, Chunxu
    Li, Botong
    Zeng, Zhongming
    Long, Shibing
    IEEE ELECTRON DEVICE LETTERS, 2023, 44 (03) : 384 - 387
  • [50] 1600 V, 5.1 mΩ.cm2 4H-SiC BJT with a High Current Gain of β=70
    Zhang, Jianhui
    Alexandrov, Petre
    Zhao, Jian H.
    SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 2009, 600-603 : 1155 - +
12345