A 20mΩcm2 600 V-class superjunction MOSFET

被引：0
|
作者：
Saito, W [1 ]
Omura, I [1 ]
Aida, S [1 ]
Koduki, S [1 ]
Izumisawa, M [1 ]
Yoshioka, H [1 ]
Ogura, T [1 ]
机构：
[1] Toshiba Co Ltd, Semicond Co, Saiwai Ku, Kawasaki, Kanagawa 2128583, Japan
来源：
ISPSD '04: PROCEEDINGS OF THE 16TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS | 2004年
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Superjunction (SJ) MOSFETs with extremely low on-resistance and high avalanche withstanding capability have been designed and experimentally demonstrated. The p- and n-columns for the SJ structure are designed to reduce the on-resistance and to maximize both the breakdown voltage and the avalanche withstanding capability. The demonstrated SJ-MOSFET realized the lowest on-resistance of 20similar tomOmegacm(2) among previously reported 600 V-class SJ-MOSFETs. The device also withstands high avalanche current of 185similar toA/cm(2).
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页码：459 / 462
页数：4
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