High channel density, 20 A 4H-SiC ACCUFET with Ronsp=15 mΩ-cm2

被引：8
|
作者：
Singh, R [1 ]
Capell, DC [1 ]
Richmond, JT [1 ]
Palmour, JW [1 ]
机构：
[1] Cree Inc, Durham, NC 27703 USA
来源：
ELECTRONICS LETTERS | 2003年 / 39卷 / 01期
关键词：
Channel density;
D O I：
10.1049/el:20030033
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Planar gate 4H-SiC ACCUFETs have been designed, fabricated and characterised, and the highest reported current (> 20 A) for this type of device was achieved. A novel channel design to maximise the channel density was implemented. A low specific on-resistance of 15 mOmega-cm(2) was obtained on a 9 mm(2) device using newly developed N2O anneals on gate oxides. The threshold voltage decreases from 1.5 to 0.9 V, and the extracted channel mobility increases from 18 to 33.6 cm(2)/V-s as the operating temperature is increased from 30 to 200degreesC.
引用
收藏
页码：152 / 154
页数：3
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