Effects of conducting defects on resistive switching characteristics of SiNx-based resistive random-access memory with MIS structure

被引：11

作者：

Kim, Sungjun ^{[1
]}

Cho, Seongjae ^{[2
]}

Ryoo, Kyung-Chang ^{[3
]}

Park, Byung-Gook ^{[1
]}

机构：

[1] Seoul Natl Univ, Dept Elect & Comp Engn, Inter Univ Semicond Res Ctr ISRC, Seoul 08826, South Korea

[2] Gachon Univ, Dept Elect Engn, Songnam 13120, Gyeonggi Do, South Korea

[3] Samsung Elect Co Ltd, Memory Div, DRAM Prod Planning Team, Semicond Business, Suwon 18448, Gyeonggi Do, South Korea

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2015年 / 33卷 / 06期

基金：

新加坡国家研究基金会;

关键词：

SILICON-NITRIDE;

D O I：

10.1116/1.4931946

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, the effects of conducting defects on resistive switching characteristics of SiNx-based resistive random-access memory (RRAM) have been investigated. Two types of RRAM devices having metal-insulator-silicon layer configuration were fabricated. One is the device with SiNx as the resistive switching layer deposited by plasma-enhanced chemical vapor deposition (PECVD), and the other has the SiNx layer prepared by low-pressure chemical vapor deposition (LPCVD). The device cell deposited by LPCVD (LP-SiNx cell afterward) demonstrated superior uniformity of switching parameters and better endurance cycles compared with the device cell deposited by PECVD (PE-SiNx cell afterward). (C) 2015 American Vacuum Society.

引用

页数：6

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