Effects of conducting defects on resistive switching characteristics of SiNx-based resistive random-access memory with MIS structure

被引：11
|
作者：
Kim, Sungjun [1 ]
Cho, Seongjae [2 ]
Ryoo, Kyung-Chang [3 ]
Park, Byung-Gook [1 ]
机构：
[1] Seoul Natl Univ, Dept Elect & Comp Engn, Inter Univ Semicond Res Ctr ISRC, Seoul 08826, South Korea
[2] Gachon Univ, Dept Elect Engn, Songnam 13120, Gyeonggi Do, South Korea
[3] Samsung Elect Co Ltd, Memory Div, DRAM Prod Planning Team, Semicond Business, Suwon 18448, Gyeonggi Do, South Korea
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2015年 / 33卷 / 06期
基金：
新加坡国家研究基金会;
关键词：
SILICON-NITRIDE;
D O I：
10.1116/1.4931946
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work, the effects of conducting defects on resistive switching characteristics of SiNx-based resistive random-access memory (RRAM) have been investigated. Two types of RRAM devices having metal-insulator-silicon layer configuration were fabricated. One is the device with SiNx as the resistive switching layer deposited by plasma-enhanced chemical vapor deposition (PECVD), and the other has the SiNx layer prepared by low-pressure chemical vapor deposition (LPCVD). The device cell deposited by LPCVD (LP-SiNx cell afterward) demonstrated superior uniformity of switching parameters and better endurance cycles compared with the device cell deposited by PECVD (PE-SiNx cell afterward). (C) 2015 American Vacuum Society.
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页数：6
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