Novel U-shape resistive random access memory structure for improving resistive switching characteristics

被引:0
|
作者
Inter-University Semiconductor Research Center, School of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-742, Korea, Republic of [1 ]
不详 [2 ]
机构
来源
Jpn. J. Appl. Phys. | / 4 PART 2卷
关键词
Compendex;
D O I
暂无
中图分类号
学科分类号
摘要
RRAM
引用
收藏
相关论文
共 50 条
  • [1] Novel U-Shape Resistive Random Access Memory Structure for Improving Resistive Switching Characteristics
    Ryoo, Kyung-Chang
    Oh, Jeong-Hoon
    Jung, Sunghun
    Jeong, Hongsik
    Park, Byung-Gook
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50 (04)
  • [2] Transparent resistive random access memory and its characteristics for nonvolatile resistive switching
    Seo, Jung Won
    Park, Jae-Woo
    Lim, Keong Su
    Yang, Ji-Hwan
    Kang, Sang Jung
    APPLIED PHYSICS LETTERS, 2008, 93 (22)
  • [3] Areal and Structural Effects on Oxide-Based Resistive Random Access Memory Cell for Improving Resistive Switching Characteristics
    Ryoo, Kyung-Chang
    Oh, Jeong-Hoon
    Jung, Sunghun
    Jeong, Hongsik
    Park, Byung-Gook
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 51 (04)
  • [4] Bipolar resistive switching of chromium oxide for resistive random access memory
    Chen, Shih-Cheng
    Chang, Ting-Chang
    Chen, Shih-Yang
    Chen, Chi-Wen
    Chen, Shih-Ching
    Sze, S. M.
    Tsai, Ming-Jinn
    Kao, Ming-Jer
    Huang, Fon-Shan Yeh
    SOLID-STATE ELECTRONICS, 2011, 62 (01) : 40 - 43
  • [5] Novel Protruded-Shape Unipolar Resistive Random Access Memory Structure for Improving Switching Uniformity through Excellent Conductive Filament Controllability
    Ryoo, Kyung-Chang
    Kim, Sungjun
    Oh, Jeong-Hoon
    Jung, Sunghun
    Jeong, Hongsik
    Park, Byung-Gook
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 51 (06)
  • [6] Bipolar resistive switching characteristics in tantalum nitride-based resistive random access memory devices
    Kim, Myung Ju
    Jeon, Dong Su
    Park, Ju Hyun
    Kim, Tae Geun
    APPLIED PHYSICS LETTERS, 2015, 106 (20)
  • [7] Bipolar Resistive Switching Characteristics of TiN/HfOx/ITO Devices for Resistive Random Access Memory Applications
    Tan Ting-Ting
    Chen Xi
    Guo Ting-Ting
    Liu Zheng-Tang
    CHINESE PHYSICS LETTERS, 2013, 30 (10)
  • [8] Bipolar Resistive Switching Characteristics of Transparent Indium Gallium Zinc Oxide Resistive Random Access Memory
    Chen, Min-Chen
    Chang, Ting-Chang
    Huang, Sheng-Yao
    Chen, Shih-Ching
    Hu, Chih-Wei
    Tsai, Chih-Tsung
    Sze, Simon M.
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 2010, 13 (06) : II191 - II193
  • [9] Resistive Switching in Amorphous GeSe-Based Resistive Random Access Memory
    Nam, Ki-Hyun
    Kim, Jang-Han
    Cho, Won-Ju
    Kim, Chung-Hyeok
    Chung, Hong-Bay
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2016, 16 (10) : 10393 - 10396
  • [10] Impact of resistive switching parameters on resistive random access memory crossbar arrays
    Fu, Liping
    Chen, Sikai
    Wu, Zewei
    Li, Xiaoyan
    You, Mingyang
    Fan, Xiaolong
    Gao, Xiaoping
    Li, Yingtao
    MODERN PHYSICS LETTERS B, 2020, 34 (12):