Novel U-shape resistive random access memory structure for improving resistive switching characteristics

被引：0
|
作者：
Inter-University Semiconductor Research Center, School of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-742, Korea, Republic of [1 ]
不详 [2 ]
机构：
来源：
Jpn. J. Appl. Phys. | / 4 PART 2卷
关键词：
Compendex;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
RRAM
引用
收藏
相关论文
共 50 条
  • [41] Simulation Study on Reproducing Resistive Switching Effect by Soret and Fick Diffusion in Resistive Random Access Memory
    Kentaro Kinoshita
    Ryosuke Koishi
    Takumi Moriyama
    Kouki Kawano
    Hidetoshi Miyashita
    Sang-Seok Lee
    Satoru Kishida
    MRS Advances, 2016, 1 (49) : 3373 - 3378
  • [42] Simulation Study on Reproducing Resistive Switching Effect by Soret and Fick Diffusion in Resistive Random Access Memory
    Kinoshita, Kentaro
    Koishi, Ryosuke
    Moriyama, Takumi
    Kawano, Kouki
    Miyashita, Hidetoshi
    Lee, Sang-Seok
    Kishida, Satoru
    MRS ADVANCES, 2016, 1 (49): : 3373 - 3378
  • [43] Enhanced resistive switching behaviors of organic resistive random access memory devices by adding polyethyleneimine interlayer
    Rahmani, Mehr Khalid
    Khan, Sobia Ali
    Geum, Dae-Myeong
    Jeon, Hyuntak
    Park, Seong Yeon
    Yun, Changhun
    Kang, Moon Hee
    ORGANIC ELECTRONICS, 2024, 132
  • [44] Coexistence of analog and digital resistive switching behaviors in TiN/SiNx resistive random access memory device
    Gao, Haixia
    Zhao, Yang
    Zhu, Shilong
    Qiu, Xuan
    Wang, Rui
    Guo, Jingli
    Ma, Xiaohua
    Yang, Yintang
    APPLIED PHYSICS LETTERS, 2024, 125 (21)
  • [45] Temperature dependence of resistive switching behaviors in resistive random access memory based on graphene oxide film
    Yi, Mingdong
    Cao, Yong
    Ling, Haifeng
    Du, Zhuzhu
    Wang, Laiyuan
    Yang, Tao
    Fan, Quli
    Xie, Linghai
    Huang, Wei
    NANOTECHNOLOGY, 2014, 25 (18)
  • [46] Resistive switching modification by ultraviolet illumination in amorphous SrO-based resistive random access memory
    Tan, Tingting
    Du, Yihang
    Sun, Yaling
    Zhang, Hua
    Cao, Ai
    Zha, Gangqiang
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2019, 30 (14) : 13445 - 13453
  • [47] Stochastic model of the resistive switching mechanism in bipolar resistive random access memory: Monte Carlo simulations
    Makarov, A.
    Sverdlov, V.
    Selberherr, S.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2011, 29 (01):
  • [48] Resistive Switching Characteristics and Reliability of SiNx-Based Conductive Bridge Random Access Memory
    Lin, Chun-An
    Dai, Guang-Jyun
    Tseng, Tseung-Yuen
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 65 (09) : 3775 - 3779
  • [49] Resistive switching modification by ultraviolet illumination in amorphous SrO-based resistive random access memory
    Tingting Tan
    Yihang Du
    Yaling Sun
    Hua Zhang
    Ai Cao
    Gangqiang Zha
    Journal of Materials Science: Materials in Electronics, 2019, 30 : 13445 - 13453
  • [50] STUDIES ON STRUCTURAL AND RESISTIVE SWITCHING PROPERTIES OF Al/ZnO/Al STRUCTURED RESISTIVE RANDOM ACCESS MEMORY
    Li, Hongxia
    Chen, Yiming
    Wu, Xin
    Xi, Junhua
    Huang, Yanwei
    Ji, Zhenguo
    SURFACE REVIEW AND LETTERS, 2017, 24 (04)
12345