An 8-mW, ESD-protected, CMOS LNA for ultra-wideband applications

被引：8
|
作者：
Bhatia, Karan [1 ]
Hyvonen, Sami [1 ]
Rosenbaum, Elyse [1 ]
机构：
[1] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA
来源：
PROCEEDINGS OF THE IEEE 2006 CUSTOM INTEGRATED CIRCUITS CONFERENCE | 2006年
关键词：
D O I：
10.1109/CICC.2006.320955
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A common-gate, 7.9mW, ESD-protected, CMOS Ultra-Wideband LNA is presented. A wideband transconductance enhancement scheme facilitates the inclusion of ESD protection at the circuit input and reduces noise figure. Measurement results indicate that the LNA achieves a high S-21 (15dB) over the entire band, and a 4.25kV HBM ESD protection level is projected from the measured failure current. Simulation results show low NF (34dB) across the band and an input-referred 1dB CP of -11.2dBm at 5GHz.
引用
收藏
页码：385 / 388
页数：4
相关论文
共 50 条
  • [21] A fully integrated CMOS transmitter for ultra-wideband applications
    Yuan, Tao
    Zheng, Yuanjin
    Ang, Chyuen-Wei
    Li, Le-Wei
    2007 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS, 2007, : 39 - +
  • [22] A sub-1-dB NF ±2.3-kV ESD-protected 900-MHz CMOS LNA
    Gramegna, G
    Paparo, M
    Erratico, PG
    De Vita, P
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2001, 36 (07) : 1010 - 1017
  • [23] A 6 kV ESD-protected Low-Power 24 GHz LNA for Radar Applications in SiGe BiCMOS
    Issakov, Vadim
    Kehl-Waas, Sebastian
    Ciocoveanu, Radu
    Simbuerger, Werner
    Geiselbrechtinger, Angelika
    2018 IEEE BICMOS AND COMPOUND SEMICONDUCTOR INTEGRATED CIRCUITS AND TECHNOLOGY SYMPOSIUM (BCICTS), 2018, : 194 - 197
  • [24] Theoretical analysis of a low dispersion SiGe LNA for ultra-wideband applications
    Park, Yunseo
    Lee, Chang-Ho
    Cressler, John D.
    Laskar, Joy
    IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2006, 16 (09) : 517 - 519
  • [25] AN ULTRA-WIDEBAND SiGe BiCMOS LNA FOR W-BAND APPLICATIONS
    Ozturk, Efe
    Seyyedesfahlan, Mirmehdi
    Kaynak, Mehmet
    Tekin, Ibrahim
    MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2015, 57 (06) : 1274 - 1278
  • [26] ESD-protected wideband CMOS LNAs using modified resistive feedback techniques with chip-on-board packaging
    Chang, Tienyu
    Chen, Jinghong
    Rigge, Lawrence A.
    Lin, Jenshan
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2008, 56 (08) : 1817 - 1826
  • [27] A CMOS ESD-Protected RF Front-End for UWB Receiver
    Shi, Bo
    Chia, Michael Yan Wah
    2009 PROCEEDINGS OF ESSCIRC, 2009, : 253 - 256
  • [28] A Fully Integrated 7.3 kV HBM ESD-Protected Transformer-Based 4.5-6 GHz CMOS LNA
    Borremans, Jonathan
    Thijs, Steven
    Wambacq, Piet
    Rolain, Yves
    Linten, Dimitri
    Kuijk, Maarten
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2009, 44 (02) : 344 - 353
  • [29] A 1-V, Low-Power CMOS LNA for Ultra-wideband Receivers
    Chang, Po Yang
    Wu, Hui-I
    Jou, Christina F.
    2007 ASIA PACIFIC MICROWAVE CONFERENCE, VOLS 1-5, 2007, : 1718 - 1721
  • [30] An Ultra-wideband CMOS LNA for 3-10 GHz with Low Power Consumption
    Lai, Chien-Hua
    Yang, Jeng-Rern
    PROCEEDINGS OF PROGRESS IN ELECTROMAGNETICS RESEARCH SYMPOSIUM (PIERS 2012), 2012, : 1198 - 1202
12345