A sub-1-dB NF ±2.3-kV ESD-protected 900-MHz CMOS LNA

A sub-1-dB noise figure HEM ESD-protected [-3 kV, 2.3 kV] low noise amplifier (LNA) has been integrated in a 0.35-mum RF CMOS process with on-chip inductors, The sensitivity of the LNA performances to the spread of parasitics associated with package and bondwire has been attenuated by using an inductive on-chip source degeneration, At 920 MHz and P-dc = 8.6 mW, the LNA features: noise figure NF = 1 dB, input return Loss = -8.5 dB, output return loss = -27 dB, power gain G(p) = 13 dB, input IIP3 = -1.5 dBm, At a power dissipation of 5 mW and 17.6 mW, a NF respectively equal to 1.2 dB and 0.85 db is measured, The CMOS LNA takes 12 pins of a TQFP48 package, an area of 1.0 x 0.66 mm(2) (bondwire pads excluded) and it is the first HEM ESD-protected 1-3 kV, 2.3 kV] CMOS LNA to break the 1-dB NF barrier.