ESD-protected wideband CMOS LNAs using modified resistive feedback techniques with chip-on-board packaging

被引：62

作者：

Chang, Tienyu ^{[1
]}

Chen, Jinghong ^{[2
]}

Rigge, Lawrence A. ^{[3
]}

Lin, Jenshan ^{[1
]}

机构：

[1] Univ Florida, Dept Elect & Comp Engn, Gainesville, FL 32611 USA

[2] Analog Devices Inc, Somerset, NJ 08873 USA

[3] Infineon Technol, Allentown, PA 18109 USA

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2008年 / 56卷 / 08期

关键词：

CMOS; electrostatic devices (ESDs); low-noise amplifier (LNA); multiband receiver; resistive feedback; ultra-wideband (UWB);

D O I：

10.1109/TMTT.2008.927301

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel modified resistive feedback structure for designing wideband low-noise amplifiers (LNAs) is proposed and demonstrated in this paper. Techniques including feedback through a source follower, an R-C feedback network, a gate peaking inductor inside the feedback loop, and neutralization capacitors are used. Bond-wire inductors and electrostatic devices (ESDs) are co-designed to improve the chip performance. Two LNAs, LNA1 and LNA2, were fabricated using a TSMC digital 90-nm CMOS technology. Both chips were tested on board using chip-on-board packages with ESD diodes added at the inputs and outputs. LNA1 achieves a 3-dB bandwidth of 9 GHz with 10 dB of power gain and a minimum noise figure (NF) of 4.2 dB. LNA2 achieves a 3-dB bandwidth of 3.2 GHz with 15.5 dB of power gain and a minimum NF of 1.76 dB. The two LNAs have third-order intermodulation intercept points of -8 and -9 dBm. Their power consumptions are 20 and 25 mW with a 1.2-V supply, respectively.

引用

页码：1817 / 1826

页数：10