Analysis of the effects of strain in ultra-thin SOI MOS devices

被引：0

作者：

Barin, Nicola ^{[1
]}

Fiegna, Claudio ^{[1
]}

Sangiorgi, Enrico ^{[1
]}

机构：

[1] Univ Ferrara, ENDIF, Via Saragat 1, I-44100 Ferrara, Italy

来源：

FRONTIERS IN ELECTRONICS | 2006年 / 41卷

关键词：

MOSFET; SOI; quantum; double gate; strain; tunneling;

D O I：

10.1142/9789812773081_0007

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ultra-thin body Double Gate MOS structures with strained silicon are investigated by solving the ID Schrodinger and Poisson equations, with open boundaries conditions on the wave functions in the gate electrodes. The electrostatics of this device architecture and its dependence on the amount of strain and on the thickness of the silicon layer is analyzed in terms of subband structure, subband population, carrier distribution within the strained-silicon layer, charge-voltage characteristics and gate tunneling current.

引用

页码：105 / +

页数：3

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