Microwave-assisted fabrication and characterization of p-ZnO:(Ag,N) nanorods/n-Si photodetector

被引：7
|
作者：
Duan, Li [1 ]
Wang, Pei [1 ]
Wei, Feng [1 ]
Yu, Xiaochen [1 ]
Fan, Jibin [1 ]
Xia, Huiyun [1 ]
Zhu, Panpan [1 ]
Tian, Yapeng [1 ]
机构：
[1] Changan Univ, Sch Mat Sci & Engn, Xian 710064, Peoples R China
来源：
JOURNAL OF ALLOYS AND COMPOUNDS | 2014年 / 602卷
基金：
中国国家自然科学基金;
关键词：
ZnO; Ag-N dual-doping; Nanorods; Heterojunction; FIELD-EFFECT TRANSISTORS; ZNO THIN-FILMS; N-DOPED ZNO; UV PHOTODETECTOR; ZINC-OXIDE; OPTICAL-PROPERTIES; LOW-TEMPERATURE; EMISSION; HETEROJUNCTIONS; PERFORMANCE;
D O I：
10.1016/j.jallcom.2014.03.024
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
ZnO:(Ag, N) nanorods (NRs) were vertically grown on n-type Si substrate by microwave-assisted chemical bath deposition (CBD) method to fabricate a p-ZnO/n-Si nanoscale heterojunction. The heterojunction exhibits typical rectifying current-voltage (I-V) curve with a turn-on voltage of 2.8 eV. The energy band diagrams of p-ZnO:(Ag, N)/n-Si and n-ZnO/n-Si heterojunctions were constructed to clarify the I-V characteristics. Both photoluminescence (PL) spectra and photocurrent spectra show strong ultraviolet (UV) emission peak of ZnO:(Ag, N) NRs. A high UV-to-visible rejection ratio at -2V of 1.7 Chi 10(2) is observed from the photocurrent spectra. It indicates the p-ZnO:(Ag, N) NRs/n-Si heterojunction is a potential candidate for UV photodetector applications. (C) 2014 Elsevier B. V. All rights reserved.
引用
收藏
页码：290 / 293
页数：4
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