Microwave-assisted fabrication and characterization of p-ZnO:(Ag,N) nanorods/n-Si photodetector

被引：7

作者：

Duan, Li ^{[1
]}

Wang, Pei ^{[1
]}

Wei, Feng ^{[1
]}

Yu, Xiaochen ^{[1
]}

Fan, Jibin ^{[1
]}

Xia, Huiyun ^{[1
]}

Zhu, Panpan ^{[1
]}

Tian, Yapeng ^{[1
]}

机构：

[1] Changan Univ, Sch Mat Sci & Engn, Xian 710064, Peoples R China

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2014年 / 602卷

基金：

中国国家自然科学基金;

关键词：

ZnO; Ag-N dual-doping; Nanorods; Heterojunction; FIELD-EFFECT TRANSISTORS; ZNO THIN-FILMS; N-DOPED ZNO; UV PHOTODETECTOR; ZINC-OXIDE; OPTICAL-PROPERTIES; LOW-TEMPERATURE; EMISSION; HETEROJUNCTIONS; PERFORMANCE;

D O I：

10.1016/j.jallcom.2014.03.024

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

ZnO:(Ag, N) nanorods (NRs) were vertically grown on n-type Si substrate by microwave-assisted chemical bath deposition (CBD) method to fabricate a p-ZnO/n-Si nanoscale heterojunction. The heterojunction exhibits typical rectifying current-voltage (I-V) curve with a turn-on voltage of 2.8 eV. The energy band diagrams of p-ZnO:(Ag, N)/n-Si and n-ZnO/n-Si heterojunctions were constructed to clarify the I-V characteristics. Both photoluminescence (PL) spectra and photocurrent spectra show strong ultraviolet (UV) emission peak of ZnO:(Ag, N) NRs. A high UV-to-visible rejection ratio at -2V of 1.7 Chi 10(2) is observed from the photocurrent spectra. It indicates the p-ZnO:(Ag, N) NRs/n-Si heterojunction is a potential candidate for UV photodetector applications. (C) 2014 Elsevier B. V. All rights reserved.

引用

页码：290 / 293

页数：4

共 50 条

[41] Synthesis and characterization of ZnO nanorods prepared using microwave-assisted hydrothermal method
Ridwan, M.
Fauzia, V
Roza, L.
2ND INTERNATIONAL CONFERENCE ON CURRENT PROGRESS IN FUNCTIONAL MATERIALS 2017, 2019, 496
[42] Synthesis and characterization of zinc oxide nanorods on silicon for the fabrication of p-Si/n-ZnO heterojunction diode
Badran, R. I.
Umar, Ahmad
Al-Heniti, S.
Al-Hajry, A.
Al-Harbi, T.
JOURNAL OF ALLOYS AND COMPOUNDS, 2010, 508 (02) : 375 - 379
[43] Fabrication of p-pentacene/n-Si organic photodiodes and characterization of their photoelectric properties
Kim, SS
Choi, YS
Kim, K
Kim, JH
Im, S
APPLIED PHYSICS LETTERS, 2003, 82 (04) : 639 - 641
[44] Fabrication and characterization of n-Si/p-CulnSe2 heterojunctions for photovoltaic application
Sharma, R.P.
SESI Journal, 1993, 3 (01):
[45] Formation of Al-N co-doped p-ZnO/n-Si (100) heterojunction structure by RF co-sputtering technique
Kumar, Manoj
Kim, Sang-Kyun
Choi, Se-Young
APPLIED SURFACE SCIENCE, 2009, 256 (05) : 1329 - 1332
[46] Visible and ultraviolet light alternative photodetector based on ZnO nanowire/n-Si heterojunction
Guo, Zhen
Zhao, Dongxu
Liu, Yichun
Shen, Dezhen
Zhang, Jiying
Li, Binghui
APPLIED PHYSICS LETTERS, 2008, 93 (16)
[47] Double-peaked decay of transient photovoltage in nanoporous ZnO/n-Si photodetector
Hao Liu
Cheng Fu
Kun Zhao
Science China Physics, Mechanics & Astronomy, 2014, 57 : 1206 - 1208
[48] Double-peaked decay of transient photovoltage in nanoporous ZnO/n-Si photodetector
LIU Hao
FU Cheng
ZHAO Kun
Science China(Physics,Mechanics & Astronomy), 2014, Mechanics & Astronomy)2014 (06) : 1206 - 1208
[49] Double-peaked decay of transient photovoltage in nanoporous ZnO/n-Si photodetector
Liu Hao
Fu Cheng
Zhao Kun
SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY, 2014, 57 (06) : 1206 - 1208
[50] Electrically driven ultraviolet lasing behavior from phosphorus-doped p-ZnO nanonail array/n-Si heterojunction
Zhang, Jun-Yan
Zhang, Qi-Feng
Deng, Tian-Song
Wu, Jin-Lei
APPLIED PHYSICS LETTERS, 2009, 95 (21)

← 1 2 3 4 5 →