Unique property of a-InGaZnO/Ag Interface on Thin-Film Transistor

被引：0
|
作者：
Ueoka, Yoshihiro [1 ]
Ishikawa, Yasuaki [1 ]
Bermundo, Juan Paolo [1 ]
Yamazaki, Haruka [1 ]
Urakawa, Satoshi [1 ]
Osada, Yukihiro [1 ]
Horita, Masahiro [1 ]
Uraoka, Yukiharu [1 ]
机构：
[1] Nara Inst Sci & Technol, Grad Sch Mat Sci, Nara 6300192, Japan
来源：
PROCEEDINGS OF 2013 TWENTIETH INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD 13): TFT TECHNOLOGIES AND FPD MATERIALS | 2013年
关键词：
SEMICONDUCTORS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) having Ag, Ti, and Mo as source and drain electrodes were characterized. TFTs with Ag electrodes indicated a low and noisy on-state current at a large channel length in a low drain-source voltage. This indicates that the spatial potential barrier exists at the a-IGZO/Ag interface and the resistance of the potential barrier changes like a resistance random access memory. We investigated the unique poverties of a-IGZO/Ag interface systematically.
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页码：37 / 38
页数：2
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