Abnormal Subthreshold Swing Decrease in a-InGaZnO Thin-Film Transistor After Self-Heating Stress

被引：2

作者：

Kuo, Chuan-Wei ^{[1
]}

Chang, Ting-Chang ^{[2
,3
]}

Chen, Jian-Jie ^{[2
]}

Zhou, Kuan-Ju ^{[2
]}

Tsai, Tsung-Ming ^{[1
]}

机构：

[1] Natl Sun Yat Sen Univ, Dept Mat & Optoelect Sci, Kaohsiung 80424, Taiwan

[2] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 80424, Taiwan

[3] Natl Sun Yat Sen Univ, Ctr Crystal Res, Kaohsiung 80424, Taiwan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2022年 / 69卷 / 12期

关键词：

Capacitance-voltage (C-V); charge trapping model; self-heating stress (SHS); SILVACO-TCAD simulation; subthreshold swing (SS); HOT-CARRIER DEGRADATION; TEMPERATURE; TFTS; GATE;

D O I：

10.1109/TED.2022.3217246

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This study investigates abnormal decreased subthreshold swing (S.S.) and increased ION in backchannel etch (BCE) InGaZnO (IGZO) thin-film transistors (TFTs) under self-heating stress (SHS) operation. With confirmation of the energy band diagram via gate-to-source (CGS) and gate-to-drain capacitance (CGD) measurements of the capacitance-voltage (C-V) curve, the degradation mechanism is further inferred. The degradation arises from uneven trapped charges by the thermal field. To illustrate the mechanism, the device with uneven trapped charges and the double-gate device with different values of VTH are simulated by SILVACO-TCAD.

引用

页码：6789 / 6793

页数：5

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