Influence of Passivation Layers on Characteristics of a-InGaZnO Thin-Film Transistors

被引：54
|
作者：
Liu, Shou-En [1 ,2 ]
Yu, Ming-Jiue [1 ]
Lin, Chang-Yu [1 ]
Ho, Geng-Tai [1 ]
Cheng, Chun-Cheng [1 ]
Lai, Chih-Ming [1 ]
Lin, Chrong-Jung [2 ]
King, Ya-Chin [2 ]
Yeh, Yung-Hui [1 ]
机构：
[1] Ind Technol Res Inst, Elect & Optoelect Res Labs, Hsinchu 31040, Taiwan
[2] Natl Tsing Hua Univ, Dept Elect Engn, Semicond Technol Applicat Res Grp, Microelect Lab, Hsinchu 30013, Taiwan
来源：
IEEE ELECTRON DEVICE LETTERS | 2011年 / 32卷 / 02期
关键词：
Amorphous InGaZnO; passivation layer; thin-film transistor; STRESS;
D O I：
10.1109/LED.2010.2091620
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We investigated the influence of passivation-layer deposition on the characteristics of a-InGaZnO thin-film transistors (TFTs). The threshold voltage (V-T) of the TFTs shifted markedly as a result of the mechanical stress induced by the passivation layers above. By adjusting the deposition parameters during the passivation process, the performance of the TFTs can be modulated. The a-InGaZnO TFTs after dual passivation exhibited good performance with a field-effect mobility of 11.35 cm(2)/V.s, a threshold voltage of 2.86 V, and an on-off ratio of 10(8).
引用
收藏
页码：161 / 163
页数：3
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