Unique property of a-InGaZnO/Ag Interface on Thin-Film Transistor

被引：0

作者：

Ueoka, Yoshihiro ^{[1
]}

Ishikawa, Yasuaki ^{[1
]}

Bermundo, Juan Paolo ^{[1
]}

Yamazaki, Haruka ^{[1
]}

Urakawa, Satoshi ^{[1
]}

Osada, Yukihiro ^{[1
]}

Horita, Masahiro ^{[1
]}

Uraoka, Yukiharu ^{[1
]}

机构：

[1] Nara Inst Sci & Technol, Grad Sch Mat Sci, Nara 6300192, Japan

来源：

PROCEEDINGS OF 2013 TWENTIETH INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD 13): TFT TECHNOLOGIES AND FPD MATERIALS | 2013年

关键词：

SEMICONDUCTORS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) having Ag, Ti, and Mo as source and drain electrodes were characterized. TFTs with Ag electrodes indicated a low and noisy on-state current at a large channel length in a low drain-source voltage. This indicates that the spatial potential barrier exists at the a-IGZO/Ag interface and the resistance of the potential barrier changes like a resistance random access memory. We investigated the unique poverties of a-IGZO/Ag interface systematically.

引用

页码：37 / 38

页数：2

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