Diffusion of ion implanted as in Si1-xGex epilayers

被引：0
|
作者：
Zou, LF
Wang, ZG
Sun, DZ
Fan, TW
Liu, XF
Zhang, JW
机构：
来源：
CHINESE PHYSICS LETTERS | 1997年 / 14卷 / 01期
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中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Diffusion of implanted As ion in relaxed Si1-xGex was studied as a function of Ge content over a wide range of Ge fractions (0-43%) and annealing temperature, and was compared to diffusion in Si. Experimental results showed that the As diffusion is enhanced with increasing annealing temperature for certain Ge content and strongly dependent on the higher Ge content and the faster As diffusion.
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页码：51 / 54
页数：4
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