Diffusion of ion implanted as in Si1-xGex epilayers

被引：0
|
作者：
Zou, LF
Wang, ZG
Sun, DZ
Fan, TW
Liu, XF
Zhang, JW
机构：
来源：
CHINESE PHYSICS LETTERS | 1997年 / 14卷 / 01期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Diffusion of implanted As ion in relaxed Si1-xGex was studied as a function of Ge content over a wide range of Ge fractions (0-43%) and annealing temperature, and was compared to diffusion in Si. Experimental results showed that the As diffusion is enhanced with increasing annealing temperature for certain Ge content and strongly dependent on the higher Ge content and the faster As diffusion.
引用
收藏
页码：51 / 54
页数：4
相关论文
共 50 条
  • [41] Damage creation in ion irradiated Si1-xGex/Si structures
    Martin, Michael
    Thompson, Phillip E.
    Carter, Jesse
    Zhu, Lei
    Hollander, Mark
    Shao, Lin
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2008, 266 (10): : 2483 - 2485
  • [42] ION CHANNELING ANALYSIS OF A SI1-XGEX(AS)/SI STRAINED LAYER
    MOORE, JA
    LENNARD, WN
    MASSOUMI, GR
    JACKMAN, TE
    BARIBEAU, JM
    JACKMAN, JA
    APPLIED PHYSICS LETTERS, 1989, 54 (25) : 2571 - 2573
  • [43] Electrical determination of bandgap narrowing in bipolar transistors with epitaxial Si, epitaxial Si1-XGeX, and ion implanted bases
    Ashburn, P
    Boussetta, H
    Hashim, MDR
    Chantre, A
    Mouis, M
    Parker, GJ
    Vincent, G
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1996, 43 (05) : 774 - 783
  • [44] Boron diffusion in strained Si1-xGex epitaxial layers
    Moriya, N.
    Feldman, L.C.
    Luftman, H.S.
    King, C.A.
    Bevk, J.
    Freer, B.
    1600, (71):
  • [45] Elastic interactions and diffusion of Sn in Si1-xGex systems
    Riihimaki, I.
    Virtanen, A.
    Kettunen, H.
    Pusa, P.
    Laitinen, P.
    Raisanen, J.
    APPLIED PHYSICS LETTERS, 2007, 90 (18)
  • [46] EFFECT OF ION-IMPLANTED GERMANIUM PROFILE ON THE CHARACTERISTICS OF SI1-XGEX/SI HETEROJUNCTION BIPOLAR-TRANSISTORS
    GRAHN, K
    XIA, Z
    KUIVALAINEN, P
    KARLSTEEN, M
    WILLANDER, M
    ELECTRONICS LETTERS, 1993, 29 (18) : 1621 - 1623
  • [47] Raman spectroscopy of Si1-xGex epilayers (vol 124, pg 127, 2005)
    Pezzoli, F.
    Martinelli, Lucio
    Grilli, E.
    Guzzi, M.
    Sanguinetti, S.
    Bollani, M.
    Chrastina, H. D.
    Isella, G.
    von Kaenel, H.
    Wintersberger, E.
    Stangl, J.
    Bauer, G.
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2007, 137 (1-3): : 315 - 315
  • [48] Composition dependence of Si and Ge diffusion in relaxed Si1-xGex alloys
    Kube, R.
    Bracht, H.
    Hansen, J. Lundsgaard
    Larsen, A. Nylandsted
    Haller, E. E.
    Paul, S.
    Lerch, W.
    JOURNAL OF APPLIED PHYSICS, 2010, 107 (07)
  • [49] Ion implantation induced damage in relaxed Si1-xGex
    Barklie, RC
    ORaifeartaigh, C
    NylandstedLarsen, A
    Priolo, F
    Lulli, G
    Grob, JJ
    Mesli, A
    Lindner, JKN
    Cristiano, F
    Hemment, PLF
    ION IMPLANTATION TECHNOLOGY - 96, 1997, : 698 - 701
  • [50] Strain-induced diffusion in a strained Si1-xGex/Si heterostructure
    Lim, YS
    Lee, JY
    Kim, HS
    Moon, DW
    APPLIED PHYSICS LETTERS, 2000, 77 (25) : 4157 - 4159
12345