EPITAXIAL REGROWTH OF SB IMPLANTED SI1-XGEX ALLOY LAYERS

被引:21
|
作者
ATZMON, Z
EIZENBERG, M
REVESZ, P
MAYER, JW
HONG, SQ
SCHAFFLER, F
机构
[1] TECHNION ISRAEL INST TECHNOL,INST SOLID STATE,IL-32000 HAIFA,ISRAEL
[2] CORNELL UNIV,DEPT MAT SCI & ENGN,ITHACA,NY 14853
[3] DAIMLER BENZ AG,ULM RES CTR,W-7900 ULM,GERMANY
关键词
D O I
10.1063/1.107043
中图分类号
O59 [应用物理学];
学科分类号
摘要
Solid phase epitaxial regrowth of Sb implanted strained Si1-xGex alloy layers is reported. A set of Si0.92Ge0.08 alloys, MBE grown on (100)Si substrates, were implanted at room temperature with Sb+ ions at an energy of 200 keV and a dose of 10(15) ions/cm2. These alloys were annealed in a RTA system at temperatures of 525, 550, and 575-degrees-C for durations between 30 s and 10 min. Backscattering (channeling) measurements show an increase in the regrowth rate compared to furnace annealed Sb implanted (100)Si. Hall effect measurements show an increase in the carrier concentration as the amorphous/crystalline interface propagates to the surface. The concentration reaches a maximal value which exceeds the maximum solid solubility of Sb in Si at the annealing temperature by a factor of six. There is a reverse annealing tendency for longer annealing times.
引用
收藏
页码:2243 / 2245
页数:3
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