A review of processing dependences of microstructure and orientation of ferroelectric thin films

被引：0
|
作者：
He Haiyan [1 ]
机构：
[1] Shaanxi Univ Sci & Technol, Coll Mat Sci & Engn, Xianyang 710021, Shaanxi, Peoples R China
来源：
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS | 2009年 / 11卷 / 02期
关键词：
Thin film; Ferroelectricity; Processing effect; microstructure; orientation; TIME TEXTURE TRANSITION; CRYSTALLIZATION BEHAVIOR; ELECTRICAL-PROPERTIES; GEL; DENSIFICATION;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The ferroelectric thin film was widely investigated in detail in recent years. The ferroelectric properties of the thin films are obviously dependent on the microstructure of the film, which were influenced by some processing parameters for preparing the films, including precursor solution chemistry, nature of substrate, film thickness, and condition of heat treatment etc. In this paper, these pcocessing dependences of the films were reviewed.
引用
收藏
页码：140 / 145
页数：6
相关论文
共 50 条
  • [41] Ferroelectric thin films for micro-sensors and actuators: a review
    Muralt, P
    JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 2000, 10 (02) : 136 - 146
  • [42] Ferroelectric domain structures in epitaxial PZT thin films: A review
    Lee, K
    Lee, KS
    Kim, YK
    Baik, S
    INTEGRATED FERROELECTRICS, 2002, 46 : 307 - 328
  • [43] Effects of microstructure on the properties of ferroelectric lead zirconate titanate (PZT) thin films
    W.C. Goh
    K. Yao
    C.K. Ong
    Applied Physics A, 2005, 81 : 1089 - 1093
  • [44] Effects of microstructure on the properties of ferroelectric lead zirconate titanate (PZT) thin films
    Goh, WC
    Yao, K
    Ong, CK
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2005, 81 (05): : 1089 - 1093
  • [45] Microstructure and ferroelectric properties of dysprosium-doped bismuth titanate thin films
    Cheng, Chuanpin
    Tang, Minghua
    Ye, Zhi
    Zhou, Yichun
    Zheng, Xuejun
    Hu, Zenshun
    Hu, Heping
    MATERIALS LETTERS, 2007, 61 (19-20) : 4117 - 4120
  • [46] Phase transition from ferroelectric to glass-like microstructure in thin films
    Alyoshin, VA
    Sviridov, EV
    Sapozhnikov, LA
    Zakharchenko, IN
    FERROELECTRICS, 1999, 235 (1-4) : 47 - 57
  • [47] The microstructure, phase and ferroelectric properties of PZT thin films on oriented multilayer electrodes
    Li, TK
    Hsu, ST
    Gao, YF
    Engelhard, M
    FERROELECTRIC THIN FILMS VIII, 2000, 596 : 199 - 204
  • [48] Composition-related effects of microstructure on the ferroelectric behavior of SBT thin films
    Tejedor, P
    Ocal, C
    Barrena, E
    Jiménez, R
    Alemany, C
    Mendiola, J
    APPLIED SURFACE SCIENCE, 2001, 175 : 759 - 763
  • [49] Effects of the annealing temperature on the microstructure and the electrical properties in SBT ferroelectric thin films
    Cheon, CI
    Min, BW
    Kwong, DL
    Kim, JS
    INTEGRATED THIN FILMS AND APPLICATIONS, 1998, 86 : 245 - 254
  • [50] Microstructure development in lead zirconate titanate ferroelectric thin films during annealing
    Aungkavattana, P
    TrolierMcKinstry, S
    ISAF '96 - PROCEEDINGS OF THE TENTH IEEE INTERNATIONAL SYMPOSIUM ON APPLICATIONS OF FERROELECTRICS, VOLS 1 AND 2, 1996, : 801 - 804
12345