Composition-related effects of microstructure on the ferroelectric behavior of SBT thin films

被引:10
|
作者
Tejedor, P [1 ]
Ocal, C [1 ]
Barrena, E [1 ]
Jiménez, R [1 ]
Alemany, C [1 ]
Mendiola, J [1 ]
机构
[1] CSIC, Inst Ciencia Mat Madrid, Madrid 28049, Spain
关键词
SBT; surface morphology; ferroelectric properties; NVFERAM;
D O I
10.1016/S0169-4332(01)00112-X
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Non-stoichiometric strontium bismuth tantalate, Sr1-xBi2+yTa2O9 (SBT) thin films with different cation ratios have been deposited by metalorganic decomposition (MOD) on Pt/TiO2/SiO2/Si(1 0 0) substrates, using strontium (2,2,6,6-tetramethyl-3,5-heptadionate). bismuth (2,2,6.6-tetramethyl-3,5-heptadionate), and tantalum ethoxide as precursors. Crystallization of the films was carried out at 750 degreesC under an atmosphere of O-2, following a firing step at 550 degreesC. The crystal phase and orientation of the 300 nm thick films were studied by XRD (CBXRD and GIXRD). The surface morphology of the films was examined by AFM. For an Sr:Bi ratio of 0.8:2.2, the films are formed by large clusters of elongated grains corresponding to the SET phase embedded in a matrix of a Bi-deficient pyrochlore phase. For Sr:Bi ratios of 0.7:2.2 and 0.7:2.3, we obtained single-phase orthorhombic SET films formed by densely packed elongated grains, whose axial ratio was dependent on the specific cation ratio used. Single-phase SET films showed very low polarization fatigue after 10(11) switching cycles and good retention properties. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:759 / 763
页数:5
相关论文
共 50 条
  • [1] Effects of the annealing temperature on the microstructure and the electrical properties in SBT ferroelectric thin films
    Cheon, CI
    Min, BW
    Kwong, DL
    Kim, JS
    INTEGRATED THIN FILMS AND APPLICATIONS, 1998, 86 : 245 - 254
  • [2] Thermal Behavior of ferroelectric switching properties of SBT thin films
    Tanaka, M
    Hironaka, K
    Onodera, A
    FERROELECTRICS, 2002, 266 (266) : 103 - 110
  • [3] Microstructure- and composition-related characteristics of LaF3 thin films at 193 nm
    Liu, Ming-Chung
    Lee, Cheng-Chung
    Kaneko, Masaaki
    Nakahira, Kazuhide
    Takano, Yuuichi
    OPTICAL ENGINEERING, 2006, 45 (08)
  • [4] Thermal behavior of ferroelectric switching properties of SBT thin films
    Tanaka, Masahiro
    Hironaka, Katsuyuki
    Onodera, Akira
    Ferroelectrics, 2002, 266 : 439 - 446
  • [5] Improvement in microstructure of SBT thin films
    Karasawa, J
    Hamada, Y
    Ohashi, K
    Natori, E
    Oguchi, K
    Shimoda, T
    Joshi, V
    McMillan, LD
    De Araujo, CAP
    INTEGRATED FERROELECTRICS, 2001, 39 (1-4) : 1149 - 1164
  • [6] Crystallization mechanism of ferroelectric SBT thin films
    Ikeda, Y
    Hironaka, K
    Isobe, C
    FERROELECTRIC THIN FILMS VI, 1998, 493 : 209 - 214
  • [7] Temperature dependence of ferroelectric properties of SBT thin films
    Jimenez, R
    Alemany, C
    Calzada, ML
    Tejedor, P
    Mendiola, J
    JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2001, 21 (10-11) : 1601 - 1604
  • [8] High energy Li ion irradiation effects in ferroelectric PZT and SBT thin films
    Angadi, B
    Victor, P
    Jali, VM
    Lagare, MT
    Kumar, R
    Krupanidhi, SB
    THIN SOLID FILMS, 2003, 434 (1-2) : 40 - 48
  • [9] Charging effects on ferroelectric SBT thin films imaged by noncontact electrostatic force microscopy
    Junghans, N
    Kolbesen, BO
    ANALYTICAL AND DIAGNOSTIC TECHNIQUES FOR SEMICONDUCTOR MATERIALS, DEVICES, AND PROCESSES, 2003, 2003 (03): : 285 - 292
  • [10] Thickness dependence of the ferroelectric characteristics of SBT and SBTN thin films
    Park, JD
    Oh, TS
    INTEGRATED FERROELECTRICS, 2001, 33 (1-4) : 235 - 244