A review of processing dependences of microstructure and orientation of ferroelectric thin films

被引：0
|
作者：
He Haiyan [1 ]
机构：
[1] Shaanxi Univ Sci & Technol, Coll Mat Sci & Engn, Xianyang 710021, Shaanxi, Peoples R China
来源：
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS | 2009年 / 11卷 / 02期
关键词：
Thin film; Ferroelectricity; Processing effect; microstructure; orientation; TIME TEXTURE TRANSITION; CRYSTALLIZATION BEHAVIOR; ELECTRICAL-PROPERTIES; GEL; DENSIFICATION;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The ferroelectric thin film was widely investigated in detail in recent years. The ferroelectric properties of the thin films are obviously dependent on the microstructure of the film, which were influenced by some processing parameters for preparing the films, including precursor solution chemistry, nature of substrate, film thickness, and condition of heat treatment etc. In this paper, these pcocessing dependences of the films were reviewed.
引用
收藏
页码：140 / 145
页数：6
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