Contact Resistance of Microbumps in a Typical Through-Silicon-Via Structure

被引：5
|
作者：
Lwo, Ben-Je [1 ]
Teng, Chia-Liang [1 ]
Tseng, Kun-Fu [2 ]
Ni, Tom [3 ]
Lu, Shirley [3 ]
机构：
[1] Natl Def Univ, Chung Cheng Inst Technol, Dept Mech & Aerosp Engn, Taoyuan 335, Taiwan
[2] Asia Pacific Inst Creat, Dept Multimedia & Game Sci, Miaoli 351, Taiwan
[3] Powertech Technol Inc, Hsinchu 300, Taiwan
来源：
IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY | 2017年 / 7卷 / 01期
关键词：
Contact resistance; micro bump; through silicon via (TSV); BONDED COPPER INTERCONNECTS; 3-DIMENSIONAL INTEGRATION;
D O I：
10.1109/TCPMT.2016.2627577
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The contact resistance of microbumps in a plastic ball grid array packaging with a through-silicon-via (TSV) structure was characterized. Accordingly, a self-designed TSV daisy-chain circuit was proposed to facilitate the formulation of the measurement paths, and the test samples were made by using a commercialized packaging process to simulate real product behaviors. Using the proposed single model and the complete model for the testing structure, about 25 m ohm was measured as the average contact resistance per microbump, and the contact resistance for each microbump was separately extracted between 4 and 60 m ohm In addition, decreasing contact resistance due to the annealing effect was observed from two different reliability tests.
引用
收藏
页码：27 / 32
页数：6
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