Contact Resistance of Microbumps in a Typical Through-Silicon-Via Structure

被引：5

作者：

Lwo, Ben-Je ^{[1
]}

Teng, Chia-Liang ^{[1
]}

Tseng, Kun-Fu ^{[2
]}

Ni, Tom ^{[3
]}

Lu, Shirley ^{[3
]}

机构：

[1] Natl Def Univ, Chung Cheng Inst Technol, Dept Mech & Aerosp Engn, Taoyuan 335, Taiwan

[2] Asia Pacific Inst Creat, Dept Multimedia & Game Sci, Miaoli 351, Taiwan

[3] Powertech Technol Inc, Hsinchu 300, Taiwan

来源：

IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY | 2017年 / 7卷 / 01期

关键词：

Contact resistance; micro bump; through silicon via (TSV); BONDED COPPER INTERCONNECTS; 3-DIMENSIONAL INTEGRATION;

D O I：

10.1109/TCPMT.2016.2627577

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The contact resistance of microbumps in a plastic ball grid array packaging with a through-silicon-via (TSV) structure was characterized. Accordingly, a self-designed TSV daisy-chain circuit was proposed to facilitate the formulation of the measurement paths, and the test samples were made by using a commercialized packaging process to simulate real product behaviors. Using the proposed single model and the complete model for the testing structure, about 25 m ohm was measured as the average contact resistance per microbump, and the contact resistance for each microbump was separately extracted between 4 and 60 m ohm In addition, decreasing contact resistance due to the annealing effect was observed from two different reliability tests.

引用

页码：27 / 32

页数：6

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