Strained Si and the future direction of CMOS

被引：0
|
作者：
Thompson, Scott E. [1 ]
Sun, Guangyu [1 ]
机构：
[1] Univ Florida, Gainesville, FL 32607 USA
来源：
2006 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS, AND APPLICATIONS (VLSI-TSA), PROCEEDINGS OF TECHNICAL PAPERS | 2006年
关键词：
D O I：
暂无
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
Uniaxial process induced strain is being adopted in all 90, 65, and 45 nm high performance logic technologies. Uniaxial strain offers large performance improvement at low cost and minimally increased manufacturing complexity and is scalable to future technology nodes.
引用
收藏
页码：46 / +
页数：2
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