Excess hot-carrier currents in SOI MOSFETs and its implications

被引：13

作者：

Su, P ^{[1
]}

Gato, K ^{[1
]}

Sugii, T ^{[1
]}

Hu, CM ^{[1
]}

机构：

[1] Univ Calif Berkeley, Dept EECS, Berkeley, CA 94720 USA

来源：

40TH ANNUAL PROCEEDINGS: INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM | 2002年

关键词：

D O I：

10.1109/RELPHY.2002.996615

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work demonstrates that excess hot-carrier currents in SOI MOSFETs are caused by self-heating. Self-heating-free I-SUB data should be used for dynamic lifetime extrapolation due to long thermal time constant. The underlying mechanism, increased impact ionization with temperature at low drain bias, is studied experimentally from the angle of thermal activation energy. Our study indicates that the driving force of impact ionization transitions from the electric field to the lattice temperature with power-supply scaling below 1.2V.

引用

页码：93 / 97

页数：5

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