Excess hot-carrier currents in SOI MOSFETs and its implications

被引：13

作者：

Su, P ^{[1
]}

Gato, K ^{[1
]}

Sugii, T ^{[1
]}

Hu, CM ^{[1
]}

机构：

[1] Univ Calif Berkeley, Dept EECS, Berkeley, CA 94720 USA

来源：

40TH ANNUAL PROCEEDINGS: INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM | 2002年

关键词：

D O I：

10.1109/RELPHY.2002.996615

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work demonstrates that excess hot-carrier currents in SOI MOSFETs are caused by self-heating. Self-heating-free I-SUB data should be used for dynamic lifetime extrapolation due to long thermal time constant. The underlying mechanism, increased impact ionization with temperature at low drain bias, is studied experimentally from the angle of thermal activation energy. Our study indicates that the driving force of impact ionization transitions from the electric field to the lattice temperature with power-supply scaling below 1.2V.

引用

页码：93 / 97

页数：5

共 50 条

[31] Hot-carrier degradation mechanisms in silicon-on-insulator MOSFETs
Cristoloveanu, S
MICROELECTRONICS AND RELIABILITY, 1997, 37 (07): : 1003 - 1013
[32] Hot-carrier degradation mechanisms in silicon-on-insulator MOSFETs
Cristoloveanu, Sorin
Microelectronics Reliability, 1997, 37 (07): : 1003 - 1013
[33] SUPPRESSION OF HOT-CARRIER DEGRADATION IN SI MOSFETS BY GERMANIUM DOPING
NG, KK
PAI, CS
MANSFIELD, WM
CLARKE, GA
IEEE ELECTRON DEVICE LETTERS, 1990, 11 (01) : 45 - 47
[34] HOT-CARRIER RELIABILITY CHARACTERISTICS OF NARROW-WIDTH MOSFETS
HWANG, HS
LEE, J
FAZAN, P
DENNISON, C
SOLID-STATE ELECTRONICS, 1993, 36 (04) : 665 - 666
[35] Predictive Hot-Carrier Modeling of n-Channel MOSFETs
Bina, Markus
Tyaginov, Stanislav
Franco, Jacopo
Rupp, Karl
Wimmer, Yannick
Osintsev, Dmitry
Kaczer, Ben
Grasser, Tibor
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2014, 61 (09) : 3103 - 3110
[36] Charge pumping study of hot-carrier induced degradation of sub-100nm partially depleted SOI MOSFETs
Jay, C
Zhao, EX
Sinha, SP
Marathe, A
2002 IEEE INTERNATIONAL SOI CONFERENCE, PROCEEDINGS, 2002, : 43 - 44
[37] Electrothermal Effects on Hot-Carrier Reliability in SOI MOSFETs-AC Versus Circuit-Speed Random Stress
Chen, Wenchao
Cheng, Ran
Wang, Da-Wei
Song, Hao
Wang, Xiang
Chen, Hongsheng
Li, Erping
Yin, Wen-Yan
Zhao, Yi
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2016, 63 (09) : 3669 - 3676
[38] Hot-carrier effect on TID irradiated short-channel UTTB FD-SOI n-MOSFETs
Cui, Jiangwei
Zheng, Qiwen
Ning, Bingxu
Yu, Xuefeng
Zhao, Kai
Wei, Ying
Lu, Wu
He, Chengfa
Ren, Diyuan
Yu, Fang
Xu, Liewei
Guo, Qi
2018 IEEE RADIATION EFFECTS DATA WORKSHOP (REDW), 2018, : 308 - 310
[39] Effects of hot carrier stress on the RF performance in SOI MOSFETs
Lee, BJ
Kim, K
Park, JT
MICROELECTRONICS RELIABILITY, 2004, 44 (9-11) : 1637 - 1642
[40] CHANNEL LENGTH AND WIDTH DEPENDENCE OF HOT-CARRIER HARDNESS IN FLUORINATED MOSFETS
NISHIOKA, Y
OHYU, K
OHJI, Y
MA, TP
IEEE ELECTRON DEVICE LETTERS, 1989, 10 (12) : 540 - 542

← 1 2 3 4 5 →