Excess hot-carrier currents in SOI MOSFETs and its implications

被引：13

作者：

Su, P ^{[1
]}

Gato, K ^{[1
]}

Sugii, T ^{[1
]}

Hu, CM ^{[1
]}

机构：

[1] Univ Calif Berkeley, Dept EECS, Berkeley, CA 94720 USA

来源：

40TH ANNUAL PROCEEDINGS: INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM | 2002年

关键词：

D O I：

10.1109/RELPHY.2002.996615

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work demonstrates that excess hot-carrier currents in SOI MOSFETs are caused by self-heating. Self-heating-free I-SUB data should be used for dynamic lifetime extrapolation due to long thermal time constant. The underlying mechanism, increased impact ionization with temperature at low drain bias, is studied experimentally from the angle of thermal activation energy. Our study indicates that the driving force of impact ionization transitions from the electric field to the lattice temperature with power-supply scaling below 1.2V.

引用

页码：93 / 97

页数：5

共 50 条

[21] HOT-CARRIER DEGRADATION IN MOSFETS - A CHARGE PUMPING STUDY
DAS, NC
NATHAN, V
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (04) : 549 - 554
[22] HOT-CARRIER EFFECTS IN DEPLETION-MODE MOSFETS
ONG, TC
KO, PK
HU, C
SOLID-STATE ELECTRONICS, 1989, 32 (01) : 33 - 36
[23] Localizing Hot-Carrier Degradation in Silicon Trench MOSFETs
Ruch, Bernhard
Pobegen, Gregor
Grasser, Tibor
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021, 68 (04) : 1804 - 1809
[24] Hot-carrier effects in depletion-mode MOSFETs
Ong, T.C., 1600, (32):
[25] Modeling and probing hot-carrier luminescence from MOSFETs
Tosi, Alberto
Dalla Mora, Alberto
Pozzi, Fiorella
Zappa, Franco
IEEE ELECTRON DEVICE LETTERS, 2008, 29 (04) : 350 - 352
[26] Bias and temperature dependent hot-carrier characteristics of sub-100mn partially depleted SOI MOSFETs
Zhao, EXJ
Chan, J
Zhang, J
Marathe, A
Taylor, K
2002 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP - FINAL REPORT, 2002, : 113 - 115
[27] DC and AC hot-carrier characteristics of partially depleted SOI MOSFETs with ultra-thin gate dielectrics
Zhao, E
Chan, J
Zhang, J
Marathe, A
Taylor, K
2003 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP - FINAL REPORT, 2003, : 49 - 51
[28] The role of the buried oxide in the hot-carrier degradation of ultra thin n-channel SOI-MOSFETs
Huttner, T
Mahnkopf, R
Wurzer, H
Biebl, M
Abstreiter, G
PROCEEDINGS OF THE EIGHTH INTERNATIONAL SYMPOSIUM ON SILICON-ON-INSULATOR TECHNOLOGY AND DEVICES, 1997, 97 (23): : 277 - 282
[29] RECOVERY OF HOT-CARRIER DAMAGE IN REOXIDIZED NITRIDED OXIDE MOSFETS
DOYLE, BS
DUNN, GJ
IEEE ELECTRON DEVICE LETTERS, 1992, 13 (01) : 38 - 40
[30] HOT-CARRIER DRIFTS IN SUBMICROMETER P-CHANNEL MOSFETS
WEBER, W
LAU, F
IEEE ELECTRON DEVICE LETTERS, 1987, 8 (05) : 208 - 210

← 1 2 3 4 5 →