Fabrication of GaSb microlenses by photo and e-beam lithography and dry etching

被引：1
|
作者：
Papis, E
Piotrowska, A
Piotrowski, TT
Golaszewska, K
Ilka, L
Kruszka, R
Ratajczak, J
Katcki, J
Wróbel, J
Aleszkiewicz, M
Lukasiewicz, R
机构：
[1] Inst Electr Mat Technol, PL-02668 Warsaw, Poland
[2] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland
[3] Warsaw Univ Technol, Inst Microelect & Optoelect, PL-00672 Warsaw, Poland
来源：
FUNCTIONAL NANOMATERIALS FOR OPTOELECTRONICS AND OTHER APPLICATIONS | 2004年 / 99-100卷
关键词：
GaSb; microlens; sputter etching; reactive ion etching;
D O I：
10.4028/www.scientific.net/SSP.99-100.83
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Fabrication of surface-relief microstructures in GaSb for application in mid-infrared optoelectronic devices is described. Photo- and e-beam lithography was used to define patterns on GaSb surfaces. Ar/O-2 sputter etching and RIE in BCl3-based plasma were applied to transfer preshaped master into the GaSb substrate. Circular microlenses with an aspect ratio (height to diameter) 0.4/10 mum and circular gratings with 0.4 mum linewidth/1 mum period and 1.7 mum depth have been demonstrated.
引用
收藏
页码：83 / 86
页数：4
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