Dry e-beam etching of resist for optics

被引：0
|
作者：
Rogozhin, A. [1 ]
Bruk, M. [1 ,2 ]
Zhikharev, E. [1 ]
Streltsov, D. [3 ]
Spirin, A. [2 ]
Hramchihina, J. [1 ,4 ]
机构：
[1] RAS, Inst Phys & Technol, Moscow 117218, Russia
[2] L Ya Karpov Inst Phys Chem, Moscow 105064, Russia
[3] RAS, Enikolopov Inst Synthet Polymer Mat, Moscow 117393, Russia
[4] Moscow Inst Phys & Technol, Moscow 141700, Russia
来源：
3RD INTERNATIONAL SCHOOL AND CONFERENCE ON OPTOELECTRONICS, PHOTONICS, ENGINEERING AND NANOSTRUCTURES (SAINT PETERSBURG OPEN 2016) | 2016年 / 741卷
关键词：
D O I：
10.1088/1742-6596/741/1/012115
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Method of dry e-beam etching of resist (DEBER) is described. It appears that the method could be extremely useful for formation of wide range of structures for optics and optoelectronics. It is relatively simple to form diffraction or binary gratings, some diffractive optical elements (DOE), 3D structures or planar photonic crystals. Method could be realised in any focused e-beam induced process (FEBIP) system or in e-beam lithographer with minor modifications. DEBER method is significantly more productive than standard or grayscale e-beam lithography. Typical exposure time for 3x3.9 mm(2) area is about 10-100 s. Examples of structures formed by the DEBER method that could be used in optoelectronics are presented.
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页数：4
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