Reduction of off-current in self-aligned double-gate TFT with mask-free symmetric LDD

被引：6

作者：

Zhang, SD ^{[1
]}

Han, RQ

Sin, JKO

Chan, M

机构：

[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China

[2] Hong Kong Univ Sci & Technol, Dept Elect & Elect Engn, Hong Kong, Peoples R China

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2002年 / 49卷 / 08期

关键词：

double-gate; lightly doped drain (LDD); self-aligned; thin-film transistor (TFT);

D O I：

10.1109/TED.2002.801232

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this brief, the lateral electric field distribution in the channel of a double-gate TFT is studied and compared with that of a conventional single-gate TFT. The double-gate TFT is predicted to suffer from a more severe anomalous off-current than the single-gate TFT. A smart double-gate TFT technology is proposed to decrease the off-current. The unique feature of the technology is the lithography independent formation of the self-aligned double-gate and the symmetric lightly doped drain (LDD) structures. With the LDD applied, the anomalous off-current of the fabricated double-gate TFT is reduced by three orders of magnitude from the range of 10(-9) A/mum to 10(-12) A/mum. The orVoff current ratio is increased by three orders of magnitude accordingly from around 104 to 10(7).

引用

页码：1490 / 1492

页数：3

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