Patterning PDMS using a combination of wet and dry etching

被引:78
|
作者
Balakrisnan, B. [1 ]
Patil, S. [1 ]
Smela, E. [1 ]
机构
[1] Univ Maryland, Dept Mech Engn, College Pk, MD 20742 USA
基金
美国国家科学基金会;
关键词
MICROFLUIDIC DEVICES; SOFT LITHOGRAPHY; POLYDIMETHYLSILOXANE; SURFACES; POLYMER;
D O I
10.1088/0960-1317/19/4/047002
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
PDMS films of 10 mu m thickness can be patterned within 30 min by combining dry etching to achieve substantially vertical sidewalls with wet etching to achieve high etch rates and to protect the underlying substrate from attack. Dry etching alone would have taken 5 h, and wet etching alone would produce severe undercutting. In addition, using either technique alone produces undesirable surface morphologies. The mask used during etching is critical to a successful patterning outcome. E-beam evaporated Al was found to work well, adhering strongly to oxygen-plasma-treated PDMS and holding up well during both dry and wet etching. To prevent wrinkling of the PDMS, a fast deposition rate should be used.
引用
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页数:7
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