Structural and magnetic properties of Er-implanted GaN films

被引：13
|
作者：
Tao, Dongyan [1 ]
Liu, Chao [1 ]
Yin, Chunhai [1 ]
Li, Jianming [1 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
来源：
MATERIALS LETTERS | 2014年 / 114卷
基金：
中国国家自然科学基金;
关键词：
GaN:Er; Diluted magnetic semiconductor (DMS); Magnetic materials; Thin films; MOMENT; GD;
D O I：
10.1016/j.matlet.2013.09.095
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Ferromagnetic GaN:Er films have been successfully fabricated by implanting Er+ into unintentionally-doped GaN, and subsequent rapid thermal annealing at 800 degrees C. No secondary phase was observed within the sensitivity of XRD analysis. HRXRD results show a clear broad feature and a satellite peak on the left side of GaN:Er (0002) peak. The reduction of full width at half maximum of XRD rocking curves suggested the improvement of crystal quality through 800 degrees C annealing. Clear room temperature ferromagnetism and magnetic anisotropy have been observed. The possible origin of ferromagnetism was discussed briefly. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码：22 / 25
页数：4
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