Structural and magnetic properties of Er-implanted GaN films

被引：13
|
作者：
Tao, Dongyan [1 ]
Liu, Chao [1 ]
Yin, Chunhai [1 ]
Li, Jianming [1 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
来源：
MATERIALS LETTERS | 2014年 / 114卷
基金：
中国国家自然科学基金;
关键词：
GaN:Er; Diluted magnetic semiconductor (DMS); Magnetic materials; Thin films; MOMENT; GD;
D O I：
10.1016/j.matlet.2013.09.095
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Ferromagnetic GaN:Er films have been successfully fabricated by implanting Er+ into unintentionally-doped GaN, and subsequent rapid thermal annealing at 800 degrees C. No secondary phase was observed within the sensitivity of XRD analysis. HRXRD results show a clear broad feature and a satellite peak on the left side of GaN:Er (0002) peak. The reduction of full width at half maximum of XRD rocking curves suggested the improvement of crystal quality through 800 degrees C annealing. Clear room temperature ferromagnetism and magnetic anisotropy have been observed. The possible origin of ferromagnetism was discussed briefly. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码：22 / 25
页数：4
相关论文
共 50 条
  • [31] Structural and magnetic characterization of cobalt implanted GaN films
    He, J.
    Wang, Z. S.
    Li, M.
    Fu, D. J.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2011, 269 (10): : 1041 - 1045
  • [32] Above and below bandgap excitation of Er-defect complexes and isolated Er in Er-implanted GaN
    Braud, A
    Abouzaid, M
    Wojdak, M
    Doualan, JL
    Moncorge, R
    Pipeleers, B
    Vantomme, A
    GAN AND RELATED ALLOYS - 2003, 2003, 798 : 459 - 463
  • [33] Enhancement of magnetic moment of Er-implanted ZnO films by post-annealing in Ar and vacuum
    Li, Qian
    Yuan, Heng
    Zhang, Mengdi
    Yan, Weiqing
    Liao, Bin
    Zhang, Xu
    Ying, Minju
    MATERIALS LETTERS, 2022, 306
  • [34] Structural and magnetic properties of Er doped GaN
    Bang, HJ
    Sawahata, J
    Tsunemi, M
    Yanagihara, H
    Kita, E
    Akimoto, K
    2003 INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS: POST-CONFERENCE PROCEEDINGS, 2004, : 108 - 113
  • [35] Waveguiding properties of Er-implanted silicon-rich oxides
    Elliman, R. G.
    Forcales, M.
    Wilkinson, A. R.
    Smith, N. J.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2007, 257 : 11 - 14
  • [36] Photoluminescence and photoluminescence excitation spectroscopy of in situ Er-doped and Er-implanted GaN films grown by hydride vapor phase epitaxy
    Kim, S
    Li, X
    Coleman, JJ
    Zhang, R
    Hansen, DM
    Kuech, TF
    Bishop, SG
    MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, 1999, 4
  • [37] 1.54-MU-M PHOTOLUMINESCENCE FROM ER-IMPLANTED GAN AND ALN
    WILSON, RG
    SCHWARTZ, RN
    ABERNATHY, CR
    PEARTON, SJ
    NEWMAN, N
    RUBIN, M
    FU, T
    ZAVADA, JM
    APPLIED PHYSICS LETTERS, 1994, 65 (08) : 992 - 994
  • [38] Donor centers in Er-implanted silicon
    Emtsev, VV
    Andreev, BA
    Poloskin, DS
    Sobolev, NA
    Shek, EI
    DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3, 1997, 258-2 : 1515 - 1520
  • [39] LUMINESCENCE OF ER-IMPLANTED POROUS SILICON
    LI, Y
    ZHOU, YD
    LI, JS
    JIANG, H
    JIN, YX
    SOLID STATE COMMUNICATIONS, 1995, 96 (05) : 317 - 320
  • [40] Structural and magnetic properties of Yb-implanted GaN
    Yin Chunhai
    Liu Chao
    Tao Dongyan
    Zeng Yiping
    JOURNAL OF SEMICONDUCTORS, 2013, 34 (05)
12345