Raman scattering and photoluminescence studies of Er-implanted and Er+ O coimplanted GaN

被引：13
|
作者：
Song, SF
Chen, WD
Zhang, CG
Bian, LF
Hsu, CC
Ma, BS
Li, GH
Zhu, JJ
机构：
[1] Chinese Acad Sci, Inst Semicond, State Key Lab Surface Phys, Beijing 100083, Peoples R China
[2] Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
[3] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
来源：
JOURNAL OF APPLIED PHYSICS | 2004年 / 96卷 / 09期
基金：
中国国家自然科学基金;
关键词：
D O I：
10.1063/1.1792387
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Raman measurements and photoluminescence (PL) were performed on the metal-organic chemical-vapor deposition epitaxially grown GaN before and after the implantation with Er and Er+O. Several Raman defect modes have emerged from the implantation-damaged samples. The structures around 300 and 595 cm(-1) modes are attributed to the disorder-activated Raman scattering, whereas the 670 cm(-1) peak is assigned to nitrogen-vacancy-related defect scattering. One additional peak at 360 cm(-1) arises after Er+O coimplantation. This Raman peak is attributed to the O-implantation-induced defect complex. The appearance of the 360 cm(-1) mode results in the decrease of the Er3+ -related infrared PL intensity for the GaN:Er+O samples. (C) 2004 American Institute of Physics.
引用
收藏
页码：4930 / 4934
页数：5
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