Yield and speed optimization of a latch-type voltage sense amplifier

被引:306
|
作者
Wicht, B [1 ]
Nirschl, T
Schmitt-Landsiedel, D
机构
[1] Texas Instruments Deutschland GmbH, Mixed Signal Power & Control, D-85350 Freising Weihenstephan, Germany
[2] Tech Univ Munich, D-80333 Munich, Germany
[3] Infineon Technol, D-81609 Munich, Germany
关键词
current sensing; latch delay; latch-type sense amplifier; sense amplifier; SRAM circuits; SRAM yield; yield optimization;
D O I
10.1109/JSSC.2004.829399
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A quantitative yield analysis of a latch-type voltage sense amplifier with a high-impedance differential input stage is presented. It investigates the impact of supply voltage, input dc level, transistor sizing, and temperature on the input offset voltage. The input dc level turns out to be most significant. Also, an analytical expression for the sensing delay is derived which shows low sensitivity on the input dc bias voltage. A figure of merit indicates that an input dc level of 0.7 V-DD is optimal regarding speed and yield. Experimental results in 130-nm CMOS technology confirm that the yield can be significantly improved by lowering the input dc voltage to about 70% of the supply voltage. Thereby, the offset standard deviation decreases from 19 to 8.5 mV without affecting the delay.
引用
收藏
页码:1148 / 1158
页数:11
相关论文
共 50 条
  • [21] An offset reduction technique for latch type sense amplifier in high performance and high density SRAM
    Yu, Qunling
    Bai, Na
    Zhou, Yan
    Li, Ruixing
    Chen, Junning
    Li, Zhengping
    AUTOMATIC MANUFACTURING SYSTEMS II, PTS 1 AND 2, 2012, 542-543 : 769 - +
  • [22] A High Performance Current Latch Sense Amplifier with Vertical MOSFET
    Na, Hyoungjun
    Endoh, Tetsuo
    IEICE TRANSACTIONS ON ELECTRONICS, 2013, E96C (05) : 655 - 662
  • [23] Analysis on Sensing Yield of Voltage Latched Sense Amplifier for Low Power DRAM
    Kim, Suk Min
    Song, Byungkyu
    Oh, Tae Woo
    Jung, Seong-Ook
    2018 14TH CONFERENCE ON PHD RESEARCH IN MICROELECTRONICS AND ELECTRONICS (PRIME 2018), 2018, : 65 - 68
  • [24] A Wide Band Voltage Mode Sense Amplifier Receiver for High Speed Interconnects
    Murugeswar, P.
    Anusha, G.
    Venkateshwarlu, P.
    Bhaskar, M.
    Venkataramani, B.
    2008 IEEE REGION 10 CONFERENCE: TENCON 2008, VOLS 1-4, 2008, : 759 - 763
  • [25] A new low-voltage and high-speed sense amplifier for flash memory
    郭家荣
    冉峰
    半导体学报, 2011, (12) : 107 - 111
  • [26] A new low-voltage and high-speed sense amplifier for flash memory
    Guo Jiarong
    Ran Feng
    JOURNAL OF SEMICONDUCTORS, 2011, 32 (12)
  • [27] High speed sense amplifier circuit for low-voltage SONOS memory systems
    Yang, GJ
    Pan, LY
    Wu, D
    Zhu, J
    2005 6TH INTERNATIONAL CONFERENCE ON ASIC PROCEEDINGS, BOOKS 1 AND 2, 2005, : 195 - 198
  • [28] A Voltage-Type Sense Amplifier for Low-Power Nonvolatile Memories
    Li, Ming
    Yang, Li-Wu
    Kang, Jin-Feng
    CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2010 (CSTIC 2010), 2010, 27 (01): : 131 - 136
  • [29] EFFECT OF FAST JITTER ON A LATCH-TYPE PHASE COMPARATOR IN A PHASE-LOCKED LOOP.
    Yamashita, Masamitsu
    Murata, Masashi
    Namekawa, Toshihiko
    Matsuda, Yoshiteru
    Electronics and Communications in Japan (English translation of Denshi Tsushin Gakkai Zasshi), 1976, 59 (07): : 27 - 34
  • [30] An Offset Cancelation Technique for Latch Type Sense Amplifiers
    Souliotis, George
    Laoudias, Costas
    Terzopoulos, Nikolaos
    RADIOENGINEERING, 2014, 23 (04) : 1121 - 1129