Short-circuit Failure Mechanism of SiC Double-trench MOSFET

被引：0

作者：

Hu, Dongqing ^{[1
]}

Xia, Tian ^{[1
]}

Zhou, Xintian ^{[1
]}

Jia, Yunpeng ^{[1
]}

Wu, Yu ^{[1
]}

Yin, Shan ^{[2
]}

机构：

[1] Beijing Univ Technol, Fac Informat Technol, Beijing, Peoples R China

[2] China Acad Engn Phys, Inst Elect Engn, Mianyang, Sichuan, Peoples R China

来源：

PROCEEDINGS OF 2020 IEEE 5TH INFORMATION TECHNOLOGY AND MECHATRONICS ENGINEERING CONFERENCE (ITOEC 2020) | 2020年

关键词：

Silicon Carbide double-trench MOSFET; power semiconductor reliability; short-circuit;

D O I：

暂无

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

The purpose of this paper is to explore the failure mechanism of 650V state-of-the-art SiC double-trench MOSFETs under short-circuit (SC) test. The experimental results demonstrate drain voltage (VDS) has a pronounced influence on the SC capability of the device, and different VDS will lead to discrepant failure mechanisms. The gate-to-source oxide rupture is most likely to occur when a lower VDS is imposed on the studied device. However, the breakdown of the gate-to-source and drain-to-source takes place simultaneously with a higher VDS. And the reason will be discussed in this work.

引用

页码：696 / 699

页数：4

共 50 条

[1] Understanding Short-Circuit Failure Mechanism of Double-Trench SiC Power MOSFETs
Wei, Jiaxing
Liu, Siyang
Tong, Junhong
Zhang, Xiaobing
Sun, Weifeng
Huang, Alex Q.
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 67 (12) : 5593 - 5599
[2] A novel double-trench SiC SBD-embedded MOSFET with improved figure-of-merit and short-circuit ruggedness
Hu, Ziwei
Yao, Jiafei
Yang, Fan
Dai, Yuxuan
Yang, Kemeng
Li, Man
Chen, Jing
Zhang, Maolin
Zhang, Jun
Guo, Yufeng
MICROELECTRONICS JOURNAL, 2025, 155
[3] Review and Prospect of Short-circuit Failure and Degradation Mechanism of SiC MOSFET
Kang J.
Xin Z.
Chen J.
Wang H.
Li W.
Zhongguo Dianji Gongcheng Xuebao/Proceedings of the Chinese Society of Electrical Engineering, 2021, 41 (03): : 1069 - 1083
[4] Failure modes and mechanism analysis of SiC MOSFET under short-circuit conditions
Jiang, Xi
Wang, Jun
Lu, Jiwu
Chen, Jianjun
Yang, Xin
Li, Zongjian
Tu, Chunming
Shen, Z. John
MICROELECTRONICS RELIABILITY, 2018, 88-90 : 593 - 597
[5] Total ionizing dose effect of double-trench SiC MOSFET
Zhu, Wenlu
Guo, Hongxia
Li, Yangfan
Ma, Wuying
Zhang, Fengqi
Bai, Ruxue
Zhong, Xiangli
Li, Jifang
Yanhui, Cao
Ju, Anan
ACTA PHYSICA SINICA, 2025, 74 (05)
[6] Short-Circuit Capability Prediction and Failure Mode of Asymmetric and Double Trench SiC MOSFETs
Deng, Xiaochuan
Li, Xu
Li, Xuan
Zhu, Hao
Xu, Xiaojie
Wen, Yi
Sun, Yongkui
Chen, Wanjun
Li, Zhiqiang
Zhang, Bo
IEEE TRANSACTIONS ON POWER ELECTRONICS, 2021, 36 (07) : 8300 - 8307
[7] SiC Trench MOSFET With Reduced Switching Loss and Increased Short-Circuit Capability
Yang, Tongtong
Wang, Yan
Yue, Ruifeng
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 67 (09) : 3685 - 3690
[8] Failure Models and Comparison on Short-Circuit Performances for SiC JFET and SiC MOSFET
Zhou Y.-M.
Liu H.-Z.
Yang T.-T.
Chen Z.-Q.
Tien Tzu Hsueh Pao/Acta Electronica Sinica, 2019, 47 (03): : 726 - 733
[9] Failure Models and Comparison on Short-circuit Performances for SiC JFET and SiC MOSFET
Zhou, Yuming
Yang, Tingting
Liu, Hangzhi
Wang, Bing
2018 1ST WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS IN ASIA (WIPDA ASIA), 2018, : 123 - +
[10] Short-Circuit Dynamic Model of SiC MOSFET Considering Failure Modes
Wang, Ning
Zhang, Jianzhong
Deng, Fujin
IEEE TRANSACTIONS ON POWER ELECTRONICS, 2024, 39 (11) : 14656 - 14669

← 1 2 3 4 5 →