Review and Prospect of Short-circuit Failure and Degradation Mechanism of SiC MOSFET

被引：0

作者：

Kang J. ^{[1
]}

Xin Z. ^{[1
]}

Chen J. ^{[1
]}

Wang H. ^{[2
]}

Li W. ^{[3
]}

机构：

[1] State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, Hongqiao District, Tianjin

[2] Center of Reliable Power Electronics (CORPE), Department of Energy Technology, Aalborg University, Aalborg East

[3] College of Electrical Engineering, Zhejiang University, Hangzhou

来源：

Zhongguo Dianji Gongcheng Xuebao/Proceedings of the Chinese Society of Electrical Engineering | 2021年 / 41卷 / 03期

基金：

中国国家自然科学基金;

关键词：

Degradation; Failure mechanism; Repetitive short-circuit stress; Short-circuit fault; SiC MOSFET;

D O I：

10.13334/j.0258-8013.pcsee.200871

中图分类号：

学科分类号：

摘要：

SiC MOSFET can greatly improve the efficiency and power density of the converter, and has good application prospects in high frequency, high temperature and high voltage field. However, the SiC MOSFET's popularization and application have been limited due to its short short-circuit withstand time, serious characteristic degradation, and ambiguous failure mechanism. Therefore, it is valuable to explore SiC MOSFET short-circuit degradation and failure mechanism, that can provide guidance for the application of SiC MOSFET devices and the design of their protection circuits. Firstly, this paper summarized various types of SiC MOSFET short-circuit faults, and the characteristic for one of the typical short-circuit faults was analyzed in detail. Based on this, it discussed SiC MOSFET's two typical failure modes, the failure mechanism and influencing factors after a single short-circuit fault. Secondly, the status of SiC MOSFET degradation mechanism after repetitive short circuit stress was systematically summarized. Finally, the current research difficulties of short-circuit failure and characteristic degradation of SiC MOSFET were pointed out, and the development trend of SiC MOSFET short-circuit characteristic research was prospected. © 2021 Chin. Soc. for Elec. Eng.

引用

页码：1069 / 1083

页数：14

共 71 条

[1] PUSCHKARSKY K, GRASSER T, AICHINGER T, Et al., Review on SiC MOSFETs high-voltage device reliability focusing on threshold voltage instability, IEEE Transactions on Electron Devices, 66, 11, pp. 4604-4616, (2019)
[2] SHENG Kuang, GUO Qing, ZHANG Junming, Et al., Application prospect of silicon carbide power electronic devices in power system, Proceedings of the CSEE, 32, 30, pp. 1-7, (2012)
[3] ZENG Zheng, SHAO Weihua, HU Borong, Et al., Application and challenge of SiC devices in photovoltaic inverter, Proceedings of the CSEE, 37, 1, pp. 221-233, (2017)
[4] WANG Xuemei, Research and application of wide-gap silicon carbide power devices in electric vehicles, Proceedings of the CSEE, 34, 3, pp. 371-379, (2014)
[5] CECCARELLI L, REIGOSA P D, IANNUZZO F, Et al., A survey of SiC power MOSFETs short-circuit robustness and failure mode analysis, Microelectronics Reliability, 76, pp. 272-276, (2017)
[6] SANTINI T, SEBASTIEN M, FLORENT M, Et al., Gate oxide reliability assessment of a SiC MOSFET for high temperature aeronautic applications, 2013 IEEE ECCE.Asia Downunder, pp. 385-391, (2013)
[7] SINGH R., Reliability and performance limitations in SiC power devices, Microelectronics Reliability, 46, 5, pp. 713-730, (2006)
[8] ZHOU X, SU H, WANG Y, Et al., Investigations on the degradation of 1.2kV 4H-SiC MOSFETs under repetitive short-circuit tests, IEEE Transactions on Electron Devices, 63, 11, pp. 4346-4351, (2016)
[9] MAXIME B, REMY O, THIBAULT C, Et al., Electrical performances and reliability of commercial SiC MOSFETs at high temperature and in SC conditions, 2015 17th European Conference on Power Electronics and Applications (EPE'15-ECCE-Europe), pp. 1-9, (2015)
[10] BOIGE F, RICHARDEAU F., Gate leakage-current analysis and modelling of planar and trench power SiC MOSFET devices in extreme short-circuit operation, Microelectronics Reliability, 76, pp. 532-538, (2017)

← 1 2 3 4 5 6 7 8 →